C. Rössler

A fault-tolerant quantum computer is expected to require thousands of qubits. Trapped ion architectures provide a modular approach where the quantum register is divided into multiple subregisters connected by physically moving the corresponding ions. Transporting ions at scale comes with several challenges such as the need to connect thousands of control lines to an ion trap chip. Multiplexing the required control voltages from few input signals to multiple electrodes offers a solution to this wiring challenge. Here we demonstrate a quantum processing unit that combines a surface ion trap with a time multiplexer via a sample-and-hold technique that initially charges electrodes to fixed voltages and disconnects them during qubit operations. We characterize the unit's performance by measuring motional heating rates below one phonon per second in both open and closed switch configurations. We further characterize the sample and hold process and find that sampling intervals below 50 ms are sufficient to keep expected gate errors from decaying charges during the hold phase below $10^{-4}$. Our results indicate that the multiplexing scheme is compatible with high-fidelity operations.

Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric 3D structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked 8-inch wafers in a large-scale MEMS microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 micrometer standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a calcium-40 ion held at 200 micrometers from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within +/-5% for mode frequencies spanning 0.6--3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.