Ippei Nakamura

Trapped-ion quantum computers based on the quantum charge-coupled device architecture require on the order of ten trap electrodes per qubit, making the number of vacuum feedthroughs a bottleneck at the system scale. Time-division multiplexed (TDM)-based voltage control for trap electrodes provides a natural route to alleviate this constraint. However, previous studies have been limited to architectural proposals for static trap-potential compensation and room-temperature demonstrations of dynamic-electrode control, leaving cryogenic operation of TDM-based voltage control for static and dynamic electrodes experimentally unexplored. In this study, we develop and cryogenically validate TDM-based voltage control schemes for two distinct electrode classes. For static electrodes used in trap-potential compensation, we implement a 32-channel demultiplexed system operating at approximately 27~K, achieving an effective voltage update rate of 37.5~kHz with an output range of $\pm10~\mathrm{V}$ per channel. For dynamic electrodes used in ion operations, such as shuttling, we implement a four-channel demultiplexed system operating at approximately 14~K, achieving an effective voltage update rate of 1~MHz with a comparable output range. These results establish TDM-based voltage control as a practical approach for both electrode classes, providing a path for mitigating the vacuum feedthrough bottleneck in scalable trapped-ion quantum processors.

Independent control of numerous electrodes in quantum charge-coupled device architectures presents a significant challenge for wiring and hardware scalability. To address this issue, we demonstrate a voltage control method based on time-division multiplexing (TDM). This approach utilizes a single high-update-rate digital-to-analog converter (DAC) to sequentially generate control signals for multiple electrodes, thereby reducing both the number of required DACs and associated wiring. We experimentally validate this concept by developing a 10-channel system that operates with only two DACs. The developed TDM-based voltage control system is applied to a surface-electrode trap, where we successfully trap a single $^{40}\mathrm{Ca}^+$ ion and demonstrate a simple ion transport primitive. This approach offers a resource-efficient and scalable solution for advanced quantum computing systems based on trapped ions.

The scaling up of trapped-ion quantum processors based on the quantum charge-coupled device (QCCD) architecture is difficult owing to the extensive electronics and high-density wiring required to control numerous trap electrodes. In conventional QCCD architectures, each trap electrode is controlled via a dedicated digital-to-analog converter (DAC). The conventional approach places an overwhelming demand on electronic resources and wiring complexity. This is because the number of trap electrodes typically exceeds the number of trapped-ion qubits. This study proposes a method that leverages a high-speed DAC to generate time-division multiplexed signals to control a large-scale QCCD trapped-ion quantum processor. The proposed method replaces conventional DACs with a single high-speed DAC that generates the complete voltage waveforms required to control the trap electrodes, thereby significantly reducing the wiring complexity and overall resource requirements. Based on realistic parameters and commercially available electronics, our analysis demonstrates that a QCCD trapped-ion quantum computer with 10,000 trap electrodes can be controlled using only 13 field-programmable gate arrays and 104 high-speed DACs. This is in stark contrast to the 10,000 dedicated DACs required by conventional control methods. Consequently, employing this approach, we developed a proof-of-concept electronic system and evaluated its analog output performance.

Microwave-driven trapped ion logic gates offer a promising avenue for advancing beyond laser-based logic operations. In future microwave-based operations, however, the joule heat produced by large microwave currents flowing through narrow microwave electrodes would potentially hinder improvements in gate speed and fidelity. Moreover, scalability, particularly in cryogenic trapped ion systems, is impeded by the excessive joule heat. To address these challenges, we present a novel approach: superconducting surface trap chips that integrate high-$Q$ microwave resonators with large current capacities. Utilizing sub-ampere microwave currents in superconducting Nb resonators, we generate substantial magnetic field gradients with significantly reduced losses compared to conventional metal chips. By harnessing the high $Q$ factors of superconducting resonators, we propose a power-efficient two-qubit gate scheme capable of achieving a sub-milliwatt external microwave input power at a gate Rabi frequency of 1 kHz.