J. Meijer

Deterministic Ultracold Ion Source targeting the Heisenberg Limit

W. Schnitzler [1], N. M. Linke [1], R. Fickler [1], J. Meijer [2], F. Schmidt-Kaler [1], K. Singer [1]

Abstract

The major challenges to fabricate quantum processors and future nano solid state devices are material modification techniques with nanometre resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a segmented ion trap with mK laser cooled ions we have realized a deterministic single ion source which could operate with a huge range of sympathetically cooled ion species, isotopes or ionic molecules. We have deterministically extracted a predetermined number of ions on demand and have measured a longitudinal velocity uncertainty of 6.3m/s and a spatial beam divergence of 0.6 mrad. We show in numerical simulations that if the ions are cooled to the motional ground state (Heisenberg limit) nanometre spatial resolution can be achieved.

Concept of deterministic single ion doping with sub-nm spatial resolution

J. Meijer [1], T. Vogel [1], B. Burchard [2,3], I. Rangelow, L. Bischoff [4], J. Wrachtrup [5], M. Domhan [5], F. Jelezko [5], W. Schnitzler [6], S. A. Schulz [6], K. Singer [6], F. Schmidt-Kaler [6]

Abstract

We propose a method for deterministic implantation of single atoms into solids which relies on a linear ion trap as an ion source. Our approach allows a deterministic control of the number of implanted atoms and a spatial resolution of less than 1 nm. Furthermore, the method is expected to work for almost all hemical elements. The deterministic implantation of single phosphor or nitrogen atoms is interesting for the fabrication of scalable solid state quantum computers, in particular for silicon and diamond based schemes. A wide range of further applications is expected for the fabrication of nano and sub-nano electric devices.