Jeremy Sage

Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion's motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.

Trapped-ion quantum information processors store information in atomic ions maintained in position in free space via electric fields. Quantum logic is enacted via manipulation of the ions' internal and shared motional quantum states using optical and microwave signals. While trapped ions show great promise for quantum-enhanced computation, sensing, and communication, materials research is needed to design traps that allow for improved performance by means of integration of system components, including optics and electronics for ion-qubit control, while minimizing the near-ubiquitous electric-field noise produced by trap-electrode surfaces. In this review, we consider the materials requirements for such integrated systems, with a focus on problems that hinder current progress toward practical quantum computation. We give suggestions for how materials scientists and trapped-ion technologists can work together to develop materials-based integration and noise-mitigation strategies to enable the next generation of trapped-ion quantum computers.

We use a co-trapped ion ($^{88}\mathrm{Sr}^{+}$) to sympathetically cool and measure the quantum state populations of a memory-qubit ion of a different atomic species ($^{40}\mathrm{Ca}^{+}$) in a cryogenic, surface-electrode ion trap. Due in part to the low motional heating rate demonstrated here, the state populations of the memory ion can be transferred to the auxiliary ion by using the shared motion as a quantum state bus and measured with an average accuracy of 96(1)%. This scheme can be used in quantum information processors to reduce photon-scattering-induced error in unmeasured memory qubits.

Anomalous motional heating is a major obstacle to scalable quantum information processing with trapped ions. While the source of this heating is not yet understood, several previous studies suggest that surface contaminants may be largely responsible. We demonstrate an improvement by a factor of four in the room-temperature heating rate of a niobium surface electrode trap by in situ plasma cleaning of the trap surface. This surface treatment was performed with a simple homebuilt coil assembly and commercially-available matching network and is considerably gentler than other treatments, such as ion milling or laser cleaning, that have previously been shown to improve ion heating rates. We do not see an improvement in the heating rate when the trap is operated at cryogenic temperatures, pointing to a role of thermally-activated surface contaminants in motional heating whose activity may freeze out at low temperatures.