Kohei M. Itoh

Schrödinger cat states of a nuclear spin qudit in silicon

Xi Yu [1,2], Benjamin Wilhelm [1,2], Danielle Holmes [1,2], Arjen Vaartjes [1,2], Daniel Schwienbacher [1,2], Martin Nurizzo [1,2], Anders Kringhøj, Mark R. van Blankenstein [1,2], Alexander M. Jakob [3,2], Pragati Gupta [4], Fay E. Hudson [1,5], Kohei M. Itoh [6], Riley J. Murray [7], Robin Blume-Kohout [7], Thaddeus D. Ladd [8], Namit Anand [9,10], Andrew S. Dzurak [1,5], Barry C. Sanders [4], David N. Jamieson [3,2], Andrea Morello [1,2]

Abstract

High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced coherent states that can also be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here we demonstrate the creation and manipulation of Schrodinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and constitute logical Pauli operations for qubits encoded in the Schrodinger cat states. Our work demonstrates the ability to prepare and control nonclassical resource states, a prerequisite for applications in quantum information processing and quantum error correction using our scalable, manufacturable semiconductor platform.

Electron spin coherence exceeding seconds in high purity silicon

Alexei M. Tyryshkin [1], Shinichi Tojo [2], John J. L. Morton [3], Helge Riemann [4], Nikolai V. Abrosimov [4], Peter Becker [5], Hans-Joachim Pohl [6], Thomas Schenkel [7], Michael L. W. Thewalt [8], Kohei M. Itoh [2], S. A. Lyon [1]

Abstract

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure $^{28}$Si material, with a residual $^{29}$Si concentration of less than 50 ppm and donor densities of $10^{14-15}$ per cm$^3$. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime $T_2$ up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin $T_2$ of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits.