Monica Gutierrez Galan

High-Fidelity Raman Spin-Dependent Kicks in the Presence of Micromotion

Haonan Liu [1], Varun D. Vaidya [1], Monica Gutierrez Galan [1], Alexander K. Ratcliffe [1], Amrit Poudel [1], C. Ricardo Viteri [1]

Abstract

We propose high-fidelity single-qubit spin-dependent kicks (SDKs) for trapped ions using nanosecond Raman pulses via amplitude modulation of a continuous-wave laser with a tunable beat frequency. We develop a general method for maintaining SDK performance in the presence of micromotion by identifying optimal choices of the RF phase and frequency that suppress unwanted backward kicks. The proposed scheme enables SDK infidelities as low as $10^{-9}$ in the absence of micromotion, and below $10^{-5}$ with micromotion. This study lays the foundation for the realization of sub-trap-period and high-fidelity two-qubit gates based on SDKs.

Radial Fast Entangling Gates Under Micromotion in Trapped-Ion Quantum Computers

Phoebe Grosser [1,2], Monica Gutierrez Galan [3], Isabelle Savill-Brown [1], Alexander K. Ratcliffe [3], Haonan Liu [3], Varun D. Vaidya [3], Simon A. Haine [1], C. Ricardo Viteri [3], Joseph J. Hope [1], Zain Mehdi [1]

Abstract

Micromotion in radio-frequency ion traps is generally considered detrimental for quantum logic gates, and is typically minimized in state-of-the-art experiments. However, as a deterministic effect, it can be incorporated into quantum control frameworks aimed at designing high-fidelity quantum logic controls. In this work, we demonstrate that micromotion can be beneficial to the design of fast gates utilizing the radial modes of a two-ion crystal, particularly in the sub-trap-period regime where high-fidelity control sequences are identified with operation times ranging from hundreds of nanoseconds to microseconds. Through analysis of select fast gate solutions, we uncover the physical origin of micromotion enhancement and further study the induced gate error under experimental noises and control imperfections. This analysis establishes the feasibility of realising high-fidelity entangling gates in hundreds of nanoseconds using the micromotion-sensitive radial modes of trapped-ion crystals.