Muir Kumph

The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its thickness. Importantly, even a thin (mono) layer of a low-loss dielectric can enhance the noise level by several orders of magnitude compared to the noise above a bare metal. Close to this layered surface, the power spectral density of the electric field varies with the inverse fourth power of the distance to the surface, rather than with the inverse square, as it would above a bare metal surface. Furthermore, compared to a clean metal, where the noise spectrum does not vary with frequency (in the radio-wave and microwave bands), the dielectric layer can generate electric-field noise which scales in inverse proportion to the frequency. For various realistic scenarios, the noise levels predicted from this model are comparable to those observed in trapped-ion experiments. Thus, these findings are of particular importance for the understanding and mitigation of unwanted heating and decoherence in miniaturized ion traps.

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\dot{\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $μ$m. These results open many new avenues to arrays of micro-fabricated ion traps.

One path to realizing systems of trapped atomic ions suitable for large-scale quantum computing and simulation is to create a two-dimensional array of ion traps. Interactions between nearest-neighbouring ions could then be turned on and off by tuning the ions' relative positions and frequencies. We demonstrate and characterize the operation of a planar-electrode ion-trap array. Driving the trap with a network of phase-locked radio-frequency (RF) resonators which provide independently variable voltage amplitudes we vary the position and motional frequency of a 40Ca+ ion in two dimensions within the trap array. With suitable miniaturization of the trap structure, this provides a viable architecture for large-scale quantum simulations.

We describe the advantages of 2-dimensional, addressable arrays of spherical Paul traps. They would provide for the ability to address and tailor the interaction strengths of trapped objects in 2D and could establish a valuable new tool for quantum information processing. Simulations of trapping ions are compared to first tests using printed circuit board trap arrays loaded with dust particles. Pair-wise interactions in the array are addressed by means of an adjustable radio-frequency (RF) electrode shared between trapping sites. By attenuating this RF electrode potential, neighboring pairs of trapped objects have their interaction strength increase and are moved closer to one another. In the limit of the adjustable electrode being held at RF ground, the two formerly spherical traps are merged into one linear Paul trap.