R. M. Serra

Single-particle quantum tunneling in ionic traps

R. M. Serra [1], C. J. Villas-Boas, M. H. Y. Moussa [1]

Abstract

We describe a proposal to probe the quantum tunneling mechanism of an individual ion trapped in a double-well electromagnetic potential. The time-evolution of the probability of fluorescence measurement of the electronic ground state is employed to characterize the single-particle tunneling mechanism. The proposed scheme can be used to implement quantum information devices.

Decoherence in trapped ions due to polarization of the residual background gas

R. M. Serra [1], N. G. de Almeida [1], W. B. da Costa [2], M. H. Y. Moussa [1]

Abstract

We investigate the mechanism of damping and heating of trapped ions associated with the polarization of the residual background gas induced by the oscillating ions themselves. Reasoning by analogy with the physics of surface electrons in liquid helium, we demonstrate that the decay of Rabi oscillations observed in experiments on 9Be+ can be attributed to the polarization phenomena investigated here. The measured sensitivity of the damping of Rabi oscillations with respect to the vibrational quantum number of a trapped ion is also predicted in our polarization model.

Engineering arbitrary motional ionic state through realistic intensity-fluctuating laser pulses

R. M. Serra [1], P. B. Ramos [1], N. G. de Almeida [1,2], W. D. Jose, M. H. Y. Moussa [1]

Abstract

We present a reliable scheme for engineering arbitrary motional ionic states through an adaptation of the projection synthesis technique for trapped-ion phenomena. Starting from a prepared coherent motional state, the Wigner function of the desired state is thus sculpted from a Gaussian distribution. The engineering process has also been developed to take into account the errors arising from intensity fluctuations in the exciting-laser pulses required for manipulating the electronic and vibrational states of the trapped ion. To this end, a recently developed phenomenological-operator approach that allows for the influence of noise will be applied. This approach furnishes a straightforward technique to estimate the fidelity of the prepared state in the presence of errors, precluding the usual extensive ab initio calculations. The results obtained here by the phenomenological approach, to account for the effects of noise in our engineering scheme, can be directly applied to any other process involving trapped-ion phenomena.