Wenhao Zhang

To achieve the entangling gate fidelity above the quantum error correction threshold, it is critical to suppress errors due to experimental imperfection. We consider the Mølmer-Sørensen gates in trapped-ion systems, and develop a general approach to suppress a family of noise sources that appeared as either symmetric or asymmetric errors. Using the time-average displacement minimization technique, both symmetric error and displacement-dependent part of the asymmetric errors are eliminated. Then, by analyzing the tangent space of displacement-independent errors, we obtain the analytic form of the generators of the correction operator to the remaining error terms. We then develop a compensation pulse to fully suppress the remaining displacement-independent errors. The effectiveness of our scheme is further verified by numerical analysis, through which we observe a significant reduction of entangling gate infidelity. Our findings enhance gate fidelity and robustness to noise for ion trap quantum computing.

Trapped-ion has shown great advantages in building quantum computers. While high fidelity entangling-gate has been realized for few ions, how to maintain the high fidelity for large scale trapped-ions still remains an open problem.Here, we present an analysis on arbitrary scale ion chain and focus on motional-related errors, reported as one of the leading error sources in state-of-the-art experiments. We theoretically analyze two-qubit entangling-gate infidelity in a large ion crystal. To verify our result, we develop an efficient numerical simulation algorithm that avoids exponential increases of the Hilbert space dimension. For the motional heating error, We derive a much tighter bound of gate infidelity than previously estimated $O(NΓτ)$, and we give an intuitive understanding from the trajectories in the phase space of motional modes. Our discoveries may inspire the scheme of pulse design against incoherent errors and shed light on the way toward constructing scalable quantum computers with large ion crystals.