Zhihui Wang

We developed a resolved Raman sideband cooling scheme that can efficiently prepare a single optically trapped cesium (Cs) atom in its motional ground states. A two-photon Raman process between two outermost Zeeman sublevels in a single hyperfine state is applied to reduce the phonon number. Our scheme is less sensitive to the variation in the magnetic field than the commonly used scheme where the two outermost Zeeman sublevels belonging to the two separate ground hyperfine states are taken. Fast optical pumping with less spontaneous emission guarantees the efficiency of the cooling process. After cooling for 50 ms, 82% of the Cs atoms populate their three-dimensional ground states. Our scheme improves the long-term stability of Raman sideband cooling in the presence of magnetic field drift and is thus suitable for cooling other trapped atoms or ions with abundant magnetic sublevels.

Trapped atomic ions find wide applications ranging from precision measurement to quantum information science and quantum computing. Among the different atomic species employed, beryllium ions are widely used due to its light mass and convenient atomic structure. However, the ion loading process requires a high temperature for sufficient vapor pressure, generating undesirable gas load for the background vacuum and limiting the lifetime of a long ion chain. Here, we demonstrate a simple method to rapidly produce pure linear chains of beryllium ions with pulsed laser ablation, serving as a starting point for large-scale quantum information processing. Our method is fast compared to thermal ovens; reduces the vacuum load to only 10^(-12) Torr level; yields a short recovery time of a few seconds; and also eliminates the need for a deep ultraviolet laser for photo-ionization. In addition, we apply feedback control to obtain defect-free ion arrays with desirable lengths.