Adam M. Meier

A Classically Efficient Quantum Scalable Fermi-Hubbard Benchmark

Bryan T. Gard [1], Adam M. Meier [1]

Abstract

In order to quantify the relative performance of different testbed quantum computing devices, it is useful to benchmark them using a common protocol. While some benchmarks rely on the performance of random circuits and are generic in nature, here we instead propose and implement a practical, application-based benchmark. In particular, our protocol calculates the energy of the ground state in the single particle subspace of a 1-D Fermi Hubbard model, a problem which is efficient to solve classically. We provide a quantum ansatz for the problem that is provably able to probe the full single particle subspace for a general length 1-D chain and scales efficiently in number of gates and measurements. Finally, we demonstrate and analyze the benchmark performance on superconducting and ion trap testbed hardware from three hardware vendors and with up to 24 qubits.

High-Fidelity Bell-State Preparation with $^{40}$Ca$^+$ Optical Qubits

Craig R. Clark, Holly N. Tinkey, Brian C. Sawyer, Adam M. Meier, Karl A. Burkhardt, Christopher M. Seck, Christopher M. Shappert, Nicholas D. Guise, Curtis E. Volin, Spencer D. Fallek [1], Harley T. Hayden [1], Wade G. Rellergert [1], Kenton R. Brown [1]

Abstract

Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here we report an experimental demonstration of this entangling gate using a pair of $^{40}$Ca$^+$ ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532 nm Nd:YAG laser. Generating a Bell state in 35 $μ$s, we directly measure an infidelity of $6(3) \times 10^{-4}$ without subtraction of experimental errors. The 532 nm gate laser wavelength suppresses intrinsic photon scattering error to $\sim 1 \times 10^{-5}$.

Quantum process tomography of a Mølmer-Sørensen gate via a global beam

Holly N Tinkey [1], Adam M Meier [1], Craig R Clark [1], Christopher M Seck [2], Kenton R Brown [1]

Abstract

We present a framework for quantum process tomography of two-ion interactions that leverages modulations of the trapping potential and composite pulses from a global laser beam to achieve individual-ion addressing. Tomographic analysis of identity and delay processes reveals dominant error contributions from laser decoherence and slow qubit frequency drift during the tomography experiment. We use this framework on two co-trapped $^{40}$Ca$^+$ ions to analyze both an optimized and an overpowered Mølmer-Sørensen gate and to compare the results of this analysis to a less informative Bell-state tomography measurement and to predictions based on a simplified noise model. These results show that the technique is effective for the characterization of two-ion quantum processes and for the extraction of meaningful information about the errors present in the system. The experimental convenience of this method will allow for more widespread use of process tomography for characterizing entangling gates in trapped-ion systems.

Single-ion addressing via trap potential modulation in global optical fields

Christopher M. Seck, Adam M. Meier, J. True Merrill, Harley T. Hayden [1], Brian C. Sawyer [1], Curtis E. Volin [1], Kenton R. Brown

Abstract

To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of $^{40}$Ca$^+$ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.

Universal Control of Ion Qubits in a Scalable Microfabricated Planar Trap

Creston D. Herold, Spencer D. Fallek, J. True Merrill, Adam M. Meier, Kenton R. Brown, Curtis Volin, Jason M. Amini

Abstract

We demonstrate universal quantum control over chains of ions in a surface-electrode ion trap, including all the fundamental operations necessary to perform algorithms in a one-dimensional, nearest-neighbor quantum computing architecture. We realize both single-qubit operations and nearest-neighbor entangling gates with Raman laser beams, and we interleave the two gate types. We report average single-qubit gate fidelities as high as 0.970(1) for two-, three-, and four-ion chains, characterized with randomized benchmarking. We generate Bell states between the nearest-neighbor pairs of a three-ion chain, with fidelity up to 0.84(2). We combine one- and two-qubit gates to perform quantum process tomography of a CNOT gate in a two-ion chain, and we report an overall fidelity of 0.76(3).