Christopher M. Seck

With fault-tolerant quantum computing (FTQC) on the horizon, it is critical to understand sources of logical error in plausible hardware implementations of quantum error-correcting codes (QECC). In this work, we consider logical error rates for the surface code implemented on a hypothetical grid-based trapped-ion quantum charge-coupled device (QCCD) architecture. Specifically, we construct logical channels for the idling surface code and examine its diamond error under a mixed coherent and stochastic circuit-level noise model inspired by trapped ions. We include the coherent dephasing noise that is known to accumulate during physical qubit idling and transport in these systems, determining idling and transport durations using the time-resolved output of the trapped-ion surface code compiler (TISCC). To estimate expectation values of logical Pauli observables following hardware circuits containing non-Clifford sources of noise, we utilize a Monte Carlo technique to sample from an underlying quasi-probability distribution of Clifford circuits that we independently simulate in a phase-sensitive fashion. We verify error suppression up to code distance $d=11$ at coherent dephasing rates near and below those of current-generation trapped-ion quantum computers and find that logical error rates align with those of analogous fully stochastic simulations in this regime. Exploring higher dephasing rates at $d=3-5$, we find evidence for growing coherent rotations about all three logical Pauli axes, increased diagonal logical error process matrix elements relative to those of stochastic simulations, and a reduced dephasing rate threshold. Overall, our work paves a way toward realistic hardware emulation of small fault-tolerant quantum processes, e.g., members of a FTQC instruction set.

We introduce the Trapped-Ion Surface Code Compiler (TISCC), a software tool that generates circuits for a universal set of surface code patch operations in terms of a native trapped-ion gate set. To accomplish this, TISCC manages an internal representation of a trapped-ion system where a repeating pattern of trapping zones and junctions is arranged in an arbitrarily large rectangular grid. Surface code operations are compiled by instantiating surface code patches on the grid and using methods to generate transversal operations over data qubits, rounds of error correction over stabilizer plaquettes, and/or lattice surgery operations between neighboring patches. Beyond the implementation of a basic surface code instruction set, TISCC contains corner movement functionality and a patch translation that is implemented using ion movement alone. Except in the latter case, all TISCC functionality is extensible to alternative grid-like hardware architectures. TISCC output has been verified using the Oak Ridge Quasi-Clifford Simulator (ORQCS).

Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Molmer-Sorensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here we report an experimental demonstration of this entangling gate using a pair of $^{40}$Ca$^+$ ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532 nm Nd:YAG laser. Generating a Bell state in 35 $μ$s, we directly measure an infidelity of $6(3) \times 10^{-4}$ without subtraction of experimental errors. The 532 nm gate laser wavelength suppresses intrinsic photon scattering error to $\sim 1 \times 10^{-5}$.

We present a framework for quantum process tomography of two-ion interactions that leverages modulations of the trapping potential and composite pulses from a global laser beam to achieve individual-ion addressing. Tomographic analysis of identity and delay processes reveals dominant error contributions from laser decoherence and slow qubit frequency drift during the tomography experiment. We use this framework on two co-trapped $^{40}$Ca$^+$ ions to analyze both an optimized and an overpowered Mølmer-Sørensen gate and to compare the results of this analysis to a less informative Bell-state tomography measurement and to predictions based on a simplified noise model. These results show that the technique is effective for the characterization of two-ion quantum processes and for the extraction of meaningful information about the errors present in the system. The experimental convenience of this method will allow for more widespread use of process tomography for characterizing entangling gates in trapped-ion systems.

To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of $^{40}$Ca$^+$ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.

We perform ab-initio calculations needed to predict the cross-section of an experimentally accessible (1+1') resonance-enhanced multiphoton dissociation (REMPD) pathway in AlH+. Experimenting on AlH+ ions held in a radiofrequency Paul trap, we confirm dissociation via this channel with analysis performed using time-of-flight mass spectrometry. We demonstrate the use of REMPD for rotational state analysis, and we measure the rotational distribution of trapped AlH+ to be consistent with the expected thermal distribution. AlH+ is a particularly interesting species for ion trap work because of its electronic level structure, which makes it amenable to proposals for rotational optical pumping, direct Doppler cooling, and single-molecule fluorescence detection. Potential applications of trapped AlH+ include searches for time-varying constants, quantum information processing, and ultracold chemistry studies.