C. Matthiesen

Scalable, high-fidelity all-electronic control of trapped-ion qubits

C. M. Löschnauer, J. Mosca Toba [1], A. C. Hughes [1], S. A. King [1], M. A. Weber [1], R. Srinivas [1,2], R. Matt [1], R. Nourshargh [1], D. T. C. Allcock [1,3], C. J. Ballance [1,2], C. Matthiesen [1], M. Malinowski [1], T. P. Harty [1]

Abstract

The central challenge of quantum computing is implementing high-fidelity quantum gates at scale. However, many existing approaches to qubit control suffer from a scale-performance trade-off, impeding progress towards the creation of useful devices. Here, we present a vision for an electronically controlled trapped-ion quantum computer that alleviates this bottleneck. Our architecture utilizes shared current-carrying traces and local tuning electrodes in a microfabricated chip to perform quantum gates with low noise and crosstalk regardless of device size. To verify our approach, we experimentally demonstrate low-noise site-selective single- and two-qubit gates in a seven-zone ion trap that can control up to 10 qubits. We implement electronic single-qubit gates with 99.99916(7)% fidelity, and demonstrate consistent performance with low crosstalk across the device. We also electronically generate two-qubit maximally entangled states with 99.97(1)% fidelity and long-term stable performance over continuous system operation. These state-of-the-art results validate the path to directly scaling these techniques to large-scale quantum computers based on electronically controlled trapped-ion qubits.

Coherent Control of Trapped Ion Qubits with Localized Electric Fields

R. Srinivas [1,2], C. M. Löschnauer, M. Malinowski [1], A. C. Hughes [1], R. Nourshargh [1], V. Negnevitsky [1], D. T. C. Allcock [1,3], S. A. King [1], C. Matthiesen [1], T. P. Harty [1], C. J. Ballance [1,2]

Abstract

We present a new method for coherent control of trapped ion qubits in separate interaction regions of a multi-zone trap by simultaneously applying an electric field and a spin-dependent gradient. Both the phase and amplitude of the effective single-qubit rotation depend on the electric field, which can be localised to each zone. We demonstrate this interaction on a single ion using both laser-based and magnetic field gradients in a surface-electrode ion trap, and measure the localisation of the electric field.

Direct photonic coupling of a semiconductor quantum dot and a trapped ion

H. M. Meyer [1,2], R. Stockill [1], M. Steiner [1], C. Le Gall [1], C. Matthiesen [1], E. Clarke [3], A. Ludwig [4], J. Reichel [5,1,2], M. Atatüre, M. Köhl

Abstract

Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of an $\textrm{Yb}^+$ ion. We ameliorate the effect of the sixty-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the $σ_z$-projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum state-transfer in a hybrid photonic network.