C. M. Löschnauer

We introduce the 'smooth gate', an entangling method for trapped-ion qubits where residual spin-motion entanglement errors are adiabatically eliminated by ramping the gate detuning. We demonstrate electronically controlled two-qubit gates with an estimated error of $8.4(7)\times10^{-5}$ without ground-state cooling. We further show that the error remains $\lesssim 5\times10^{-4}$ for ions with average phonon occupation up to $\bar{n}=9.4(3)$ on the gate mode. These results indicate that trapped-ion quantum computation can achieve high fidelity at temperatures above the Doppler limit, which enables faster and simpler device operation.

We demonstrate a new technique that adapts single-qubit randomized benchmarking to two-qubit Mølmer-Sørensen gates. We use the controllable gate phase to generate Cliffords that act on a two-state subspace, enabling benchmarking of two-qubit gates without single-qubit operations. In addition to quantifying the gate infidelity, the protocol provides valuable information about the type of error by distinguishing between those that conserve the two-state subspace and those that result in leakage out of it. We demonstrate the protocol for calibrating and validating all-electronic maximally entangling gates in a trapped-ion quantum computer, achieving a two-qubit gate error of $2.6 (2)\times10^{-4}$.

The central challenge of quantum computing is implementing high-fidelity quantum gates at scale. However, many existing approaches to qubit control suffer from a scale-performance trade-off, impeding progress towards the creation of useful devices. Here, we present a vision for an electronically controlled trapped-ion quantum computer that alleviates this bottleneck. Our architecture utilizes shared current-carrying traces and local tuning electrodes in a microfabricated chip to perform quantum gates with low noise and crosstalk regardless of device size. To verify our approach, we experimentally demonstrate low-noise site-selective single- and two-qubit gates in a seven-zone ion trap that can control up to 10 qubits. We implement electronic single-qubit gates with 99.99916(7)% fidelity, and demonstrate consistent performance with low crosstalk across the device. We also electronically generate two-qubit maximally entangled states with 99.97(1)% fidelity and long-term stable performance over continuous system operation. These state-of-the-art results validate the path to directly scaling these techniques to large-scale quantum computers based on electronically controlled trapped-ion qubits.

Microwave-driven logic is a promising alternative to laser control in scaling trapped-ion based quantum processors. However, such electronic gates have yet to match the speed offered by their laser-driven counterparts. Here, we implement Mølmer-Sørensen two-qubit gates on $^{43}\text{Ca}^+$ hyperfine clock qubits in a cryogenic ($\approx25~\text{K}$) surface trap, driven by near-field microwaves. We achieve gate durations of $154~μ\text{s}$ (with $1.0(2)\%$ error) and $331~μ\text{s}$ ($0.5(1)\%$ error), which approaches the performance of typical laser-driven gates. In the $331~μ\text{s}$ gate, we demonstrate a new Walsh-modulated dynamical decoupling scheme which suppresses errors due to fluctuations in the qubit frequency as well as imperfections in the decoupling drive itself.

We present a new method for coherent control of trapped ion qubits in separate interaction regions of a multi-zone trap by simultaneously applying an electric field and a spin-dependent gradient. Both the phase and amplitude of the effective single-qubit rotation depend on the electric field, which can be localised to each zone. We demonstrate this interaction on a single ion using both laser-based and magnetic field gradients in a surface-electrode ion trap, and measure the localisation of the electric field.