J. F. Goodwin

Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic

M. A. Weber, C. Löschnauer, J. Wolf, M. F. Gely, R. K. Hanley, J. F. Goodwin [1], C. J. Ballance [1], T. P. Harty [1], D. M. Lucas [1]

Abstract

We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single $^{43}$Ca$^+$ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.

High-rate, high-fidelity entanglement of qubits across an elementary quantum network

L J Stephenson, D P Nadlinger, B C Nichol, S An [1,2], P Drmota, T G Ballance, K Thirumalai, J F Goodwin, D M Lucas, C J Ballance

Abstract

We demonstrate remote entanglement of trapped-ion qubits via a quantum-optical fiber link with fidelity and rate approaching those of local operations. Two ${}^{88}$Sr${}^{+}$ qubits are entangled via the polarization degree of freedom of two photons which are coupled by high-numerical-aperture lenses into single-mode optical fibers and interfere on a beamsplitter. A novel geometry allows high-efficiency photon collection while maintaining unit fidelity for ion-photon entanglement. We generate remote Bell pairs with fidelity $F=0.940(5)$ at an average rate $182\,\mathrm{s}^{-1}$ (success probability $2.18\times10^{-4}$).

Probing Qubit Memory Errors at the Part-per-Million Level

M. A. Sepiol, A. C. Hughes, J. E. Tarlton, D. P. Nadlinger, T. G. Ballance, C. J. Ballance [1], T. P. Harty [1], A. M. Steane [1], J. F. Goodwin [1], D. M. Lucas [1]

Abstract

Robust qubit memory is essential for quantum computing, both for near-term devices operating without error correction, and for the long-term goal of a fault-tolerant processor. We directly measure the memory error $ε_m$ for a $^{43}$Ca$^+$ trapped-ion qubit in the small-error regime and find $ε_m<10^{-4}$ for storage times $t\lesssim50\,\mbox{ms}$. This exceeds gate or measurement times by three orders of magnitude. Using randomized benchmarking, at $t=1\,\mbox{ms}$ we measure $ε_m=1.2(7)\times10^{-6}$, around ten times smaller than that extrapolated from the $T_{2}^{\ast}$ time, and limited by instability of the atomic clock reference used to benchmark the qubit.

Sideband cooling of small ion Coulomb crystals in a Penning trap

G. Stutter [1], P. Hrmo [1], V. Jarlaud [1], M. K. Joshi [1], J. F. Goodwin [1], R. C. Thompson [1]

Abstract

We have recently demonstrated the laser cooling of a single $^{40}$Ca$^+$ ion to the motional ground state in a Penning trap using the resolved-sideband cooling technique on the electric quadrupole transition S$_{1/2} \leftrightarrow$ D$_{5/2}$. Here we report on the extension of this technique to small ion Coulomb crystals made of two or three $^{40}$Ca$^+$ ions. Efficient cooling of the axial motion is achieved outside the Lamb-Dicke regime on a two-ion string along the magnetic field axis as well as on two- and three-ion planar crystals. Complex sideband cooling sequences are required in order to cool both axial degrees of freedom simultaneously. We measure a mean excitation after cooling of $\bar n_\text{COM}=0.30(4)$ for the centre of mass mode and $\bar n_\text{B}=0.07(3)$ for the breathing mode of the two-ion string with corresponding heating rates of 11(2) s$^{-1}$ and 1(1) s$^{-1}$ at a trap frequency of 162 kHz. The ground state occupation of the axial modes is above 75% for the two-ion planar crystal and the associated heating rates 0.8(5) s$^{-1}$ at a trap frequency of 355 kHz.

Resolved-sideband laser cooling in a Penning trap

J. F. Goodwin, G. Stutter [1], R. C. Thompson, D. M. Segal

Abstract

We report the laser cooling of a single $^{40}\text{Ca}^+$ ion in a Penning trap to the motional ground state in one dimension. Cooling is performed in the strong binding limit on the 729-nm electric quadrupole $S_{1/2}\leftrightarrow D_{5/2}$ transition, broadened by a quench laser coupling the $D_{5/2}$ and $P_{3/2}$ levels. We find the final ground state occupation to be $98\pm1\%$. We measure the heating rate of the trap to be very low with $\dot{\bar{n}}\approx 0.3\pm0.2\textrm{s}^{-1}$ for trap frequencies from $150-400\textrm{kHz}$, consistent with the large ion-electrode distance.