Kyungmin Lee

Trapped ions naturally host multiple motional modes alongside long-lived spin qubits, providing a scalable multimode bosonic register. Efficiently characterizing such bosonic registers requires the ability to access many motional modes with limited spin resources. Here we introduce a single-spin, multimode measurement primitive using dispersive shifts in the far-detuned multimode Jaynes-Cummings interaction. We implement a Ramsey sequence that maps phonon-number-dependent phases onto the spin, thereby realizing a multimode spin-dependent rotation (SDR). We also introduce a selective-decoupling scheme that cancels the phase induced by the carrier AC-Stark shift while preserving the phonon-number-dependent phase induced by the dispersive shift. Using this SDR-based Ramsey sequence on a single trapped ion, we experimentally extract two-mode Fock-state distributions, perform parity-based filtering of two-mode motional states, and realize a nondestructive single-shot measurement of a single-mode Fock state via repeated filtering steps.

In a linear radio-frequency (rf) ion trap, the rf null is the point of zero electric field in the dynamic trapping potential where the ion motion is approximately harmonic. When displaced from the rf null, the ion is superimposed by fast oscillations known as micromotion, which can be probed through motion-sensitive light-atom interactions. In this work, we report on the emergence of the rf pseudo-null, a locus of points where the ion responds to light as if it were at the true rf null, despite being displaced from it. The phenomenon is fully explained by accounting for the general two-dimensional structure of micromotion and is experimentally verified under various potential configurations, with observations in great agreement with numerical simulations. The rf pseudo-null manifests as a line in a two-dimensional parameter space, determined by the geometry of the incident light and its overlap with the motional structure of the ion. The true rf null occurs uniquely at the concurrent point of the pseudo-null lines induced by different light sources.

Ion trap system is a leading candidate for quantum network privileged by its long coherence time, high-fidelity gate operations, and the ion-photon entanglement that generates an ideal pair of a stationary memory qubit and a flying communication qubit. Rapid developments in nonlinear quantum frequency conversion techniques have enhanced the potential for constructing a trapped ion quantum network via optical fiber connections. The generation of long-distance entanglement has been demonstrated with ions such as Ca$^{+}$ and Ba$^{+}$, which emit photons in visible or near-infrared range naturally. On the other hand, as the qubit-native photons reside in ultra-violet (UV) spectrum, the Yb$^{+}$ ion has not been considered as a strong competitor for telecommunication qubits despite extensive research on it. Here, we demonstrate an efficient difference-frequency conversion of UV photons, emitted from a trapped Yb$^{+}$ ion, into a visible range. We provide experimental evidence that confirms the converted photons are radiated from the Yb$^{+}$ ion. Our results provide a crucial step toward realizing a long-distance trapped ion quantum network based on Yb$^{+}$ ions through quantum frequency conversion.

Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.