Nikos Daniilidis

Polarization of electric field noise near metallic surfaces

Philipp Schindler [1], Dylan J Gorman [1], Nikos Daniilidis [1], Hartmut Häffner

Abstract

Electric field noise in proximity to metallic surfaces is a poorly understood phenomenon that appears in different areas of physics. Trapped ion quantum information processors are particular susceptible to this noise, leading to motional decoherence which ultimately limits the fidelity of quantum operations. On the other hand they present an ideal tool to study this effect, opening new possibilities in surface science. In this work we analyze and measure the polarization of the noise field in a micro-fabricated ion trap for various noise sources. We find that technical noise sources and noise emanating directly from the surface give rise to different degrees of polarization which allows us to differentiate between the two noise sources. Based on this, we demonstrate a method to infer the magnitude of surface noise in the presence of technical noise.

Two mode coupling in a single ion oscillator via parametric resonance

Dylan J Gorman [1], Philipp Schindler [1], Sankaranarayanan Selvarajan [1,2], Nikos Daniilidis [1], Hartmut Häffner

Abstract

Atomic ions, confined in radio-frequency Paul ion traps, are a promising candidate to host a future quantum information processor. In this letter, we demonstrate a method to couple two motional modes of a single trapped ion, where the coupling mechanism is based on applying electric fields rather than coupling the ion's motion to a light field. This reduces the design constraints on the experimental apparatus considerably. As an application of this mechanism, we cool a motional mode close to its ground state without accessing it optically. As a next step, we apply this technique to measure the mode's heating rate, a crucial parameter determining the trap quality. In principle, this method can be used to realize a two-mode quantum parametric amplifier.

Electric field compensation and sensing with a single ion in a planar trap

Sankaranarayanan Selvarajan, Nikos Daniilidis, Sönke Möller, Rob Clark, Frank Ziesel, Kilian Singer, Ferdinand Schmidt-Kaler, Hartmut Häffner

Abstract

We use a single ion as an movable electric field sensor with accuracies on the order of a few V/m. For this, we compensate undesired static electric fields in a planar RF trap and characterize the static fields over an extended region along the trap axis. We observe a strong buildup of stray charges around the loading region on the trap resulting in an electric field of up to 1.3 kV/m at the ion position. We also find that the profile of the stray field remains constant over a time span of a few months.