Pingxing Chen

Mode-resolved thermometry of trapped ion with Deep Learning

Yi Tao [1], Ting Chen [1], Yi Xie [1], Hongyang Wang [1], Jie Zhang [1], Ting Zhang [1], Pingxing Chen [1], Wei Wu [1]

Abstract

In trapped ion system, accurate thermometry of ion is crucial for evaluating the system state and precisely performing quantum operations. However, when the motional state of a single ion is far away from the ground state, the spatial dimension of the phonon state sharply increases, making it difficult to realize accurate and mode-resolved thermometry with existing methods. In this work, we apply deep learning for the first time to the thermometry of trapped ion, providing an efficient and mode-resolved method for accurately estimating large mean phonon numbers. Our trained neural network model can be directly applied to other experimental setups without retraining or post-processing, as long as the related parameters are covered by the model's effective range, and it can also be conveniently extended to other parameter ranges. We have conducted experimental verification based on our surface trap, of which the result has shown the accuracy and efficiency of the method for thermometry of single ion under large mean phonon number, and its mode resolution characteristic can make it better applied to the characterization of system parameters, such as evaluating cooling effectiveness, analyzing surface trap noise.

Characterizing the spatial potential of a surface electrode ion trap

Qingqing Qin [1,2], Ting Chen [1,2], Xinfang Zhang [3], Baoquan Ou [1,2], Jie Zhang [1,2], Chunwang Wu [1,2], Yi Xie [1,2], Wei Wu [1,2], Pingxing Chen [1,2]

Abstract

The accurate characterization of the spatial potential generated by a planar electrode in a surface-type Paul trap is of great interest. To achieve this, we employ a simple yet highly precise parametric expression to describe the spatial field of a rectangular-shaped electrode. Based on this, an optimization method is introduced to precisely characterize the axial electric field intensity created by the powered electrode and the stray field. In contrast to existing methods, various types of experimental data, such as the equilibrium position of ions in a linear string, equilibrium positions of single trapped ions and trap frequencies, are utilized for potential estimation in order to mitigate systematic errors. This approach offers significant flexibility in voltage settings for data collection, making it particularly well-suited for surface electrode traps where ion probe trapping height may vary with casual voltage settings. In our demonstration, we successfully minimized the discrepancy between experimental observations and model predictions to an impressive extent. The relative errors of secular frequencies were suppressed within $\pm$ 0.5$\%$, and the positional error of ions was limited to less than 1.2 $μ$m, all surpassing those achieved by existing methodologies.

Experimental violation of Leggett-Garg inequality in a three-level trapped-ion system

Tianxiang Zhan [1,2], Chunwang Wu [1,2], Manchao Zhang [1,2], Qingqing Qin [1,2], Xueying Yang [1,2], Han Hu [1,2], Wenbo Su [1,2], Jie Zhang [1,2], Ting Chen [1,2], Yi Xie [1,2], Wei Wu [1,2], Pingxing Chen [1,2]

Abstract

Leggett-Garg inequality (LGI) studies the temporal correlation in the evolution of physical systems. Classical systems obey the LGI but quantum systems may violate it. The extent of the violation depends on the dimension of the quantum system and the state update rule. In this work, we experimentally test the LGI in a three-level trapped-ion system under the model of a large spin precessing in a magnetic field. The Von Neumann and Lüders state update rules are employed in our system for direct comparative analysis. The maximum observed value of Leggett-Garg correlator under the Von Neumann state update rule is $K_3 = 1.739 \pm 0.014$, which demonstrates a violation of the Lüders bound by 17 standard deviations and is by far the most significant violation in natural three-level systems.

Convenient Real-Time Monitoring of the Contamination of Surface Ion Trap

Xinfang Zhang [1,2], Yizhu Hou, Ting Chen [1,2], Wei Wu [1,2], Pingxing Chen [1,2]

Abstract

Recent studies indicated that contamination by adatoms on the surface ion trap can generate contact potential, leading to fluctuations in patch potential. By investigating contamination induced by surface adatoms during a loading process, a direct physical image of the contamination process and the relationship between the capacitance change and the contamination from surface adatoms is examined theoretically and experimentally. From the relationship, the contamination by surface adatoms and the effect of in situ treatment process can be monitored by the capacitance between electrodes in real time. This study is foundational to further research on anomalous heating with practical applications in quantum information processing from surface ion traps.

Versatile surface ion trap for effective cooling and large-scale trapping of ions

Xinfang Zhang [1,2], Baoquan Ou [1,2], Ting Chen [1,2], Yi Xie [1,2], Wei Wu [1,2], Pingxing Chen [1,2]

Abstract

Scaling up and effective cooling of ions in surface ion trap are central challenges in quantum computing and quantum simulation with trapped ions. In this theoretical study, we propose a versatile surface ion trap. In the manipulation zone of our trap, a symmetric seven-wire geometry enables innate principle-axes rotation of two parallel linear ion chains, which facilitates the cooling of ions along all principle trap axes. To alleviate contaminating the manipulation zone during ion loading, a symmetric five-wire geometry is designed as the loading zone. And a "fork junction" connects the loading and manipulation zones, which also enables the shuttling and reordering of ions. A multi-objective optimization procedure suitable for arbitrary junction designs is described in detail, and we present the corresponding optimal results for the key components of our trap. The proposed versatile trap can be used in the construction of large-scale ion quantum processors. The trap also can be used as the multi-ion-mixer or the efficient ion beam splitter, which has the potential applications in quantum simulation and quantum computing, the research of 2D dimensional ion crystals and the guides of quantum microscope, like an electron beam splitter used for quantum matter-wave optics experiments. Interesting topics involving the spin-spin interactions between two ion chains can also be simulated in our trap.