Rajeev J. Ram

We present the design and characterization of waveguide grating devices that couple visible-wavelength light at $λ=674$ nm from single-mode, high index-contrast dielectric waveguides to free-space beams forming micron-scale diffraction-limited spots a designed distance and angle from the grating. With a view to application in spatially-selective optical addressing, and in contrast to previous work on similar devices, deviations from the main Gaussian lobe up to $25$ microns from the focus and down to the $5\times10^{-6}$ level in relative intensity are characterized as well; we show that along one dimension the intensity of these weak sidelobes approaches the limit imposed by diffraction from the finite field extent in the grating region. Additionally, we characterize the polarization purity in the focal region, observing at the center of the focus a low impurity $< 3 \times 10^{-4}$ in relative intensity. Our approach allows quick, intuitive design of devices with such performance, which may be applied in trapped-ion quantum information processing and generally in any systems requiring optical routing to or from objects 10s--100s of microns from a chip surface, but benefitting from the parallelism and density of planar-fabricated dielectric integrated optics.

The long coherence times and strong Coulomb interactions afforded by trapped ion qubits have enabled realizations of the necessary primitives for quantum information processing (QIP), and indeed the highest-fidelity quantum operations in any qubit to date. But while light delivery to each individual ion in a system is essential for general quantum manipulations and readout, experiments so far have employed optical systems cumbersome to scale to even a few tens of qubits. Here we demonstrate lithographically defined nanophotonic waveguide devices for light routing and ion addressing fully integrated within a surface-electrode ion trap chip. Ion qubits are addressed at multiple locations via focusing grating couplers emitting through openings in the trap electrodes to ions trapped 50 $μ$m above the chip; using this light we perform quantum coherent operations on the optical qubit transition in individual $^{88}$Sr$^+$ ions. The grating focuses the beam to a diffraction-limited spot near the ion position with a 2 $μ$m 1/$e^2$-radius along the trap axis, and we measure crosstalk errors between $10^{-2}$ and $4\times10^{-4}$ at distances 7.5-15 $μ$m from the beam center. Owing to the scalability of the planar fabrication employed, together with the tight focusing and stable alignment afforded by optics integration within the trap chip, this approach presents a path to creating the optical systems required for large-scale trapped-ion QIP.