Yang Xu

Atomic interface engineering (AIE) is critical for advancing technologies in energy storage, catalysis, and microelectronics. In anode-less lithium metal batteries (ALLMBs), AIE is essential for controlling interfacial chemistry governing lithium deposition and solid electrolyte interphase (SEI) formation on copper current collectors. However, native copper surfaces readily oxidize, forming electronically insulating oxides that degrade performance and obscure failure mechanisms. Here, we report a scalable ion implantation strategy to create an atomically clean and robust copper interface. By implanting copper ions into commercial foils, we simultaneously remove the native oxide and introduce subsurface vacancy clusters that act as oxygen traps, yielding an oxidation-resistant and conductive surface. Experimental characterization and multiscale simulations reveal that these engineered vacancies suppress reoxidation and guide the formation of an ultrathin Li2O-enriched solid electrolyte interphase. When applied in ALLMBs, the current collectors enable uniform lithium deposition, suppress parasitic reactions, and deliver a Coulombic efficiency of 99.0% over 400 cycles under lean electrolyte conditions. This work presents a generalizable and industry-compatible approach for stabilizing electrochemical interfaces.

Quantum particles on a lattice with competing long-range interactions are ubiquitous in physics. Transition metal oxides, layered molecular crystals and trapped ion arrays are a few examples out of many. In the strongly interacting regime, these systems often exhibit a rich variety of quantum many-body ground states that challenge theory. The emergence of transition metal dichalcogenide moiré heterostructures provides a highly controllable platform to study long-range electronic correlations. Here we report an observation of nearly two-dozen correlated insulating states at fractional fillings of a WSe$_{2}$/WS$_{2}$ moiré heterostructure. The discovery is enabled by a new optical sensing technique that is built on the sensitivity to dielectric environment of the exciton excited states in single-layer semiconductor WSe$_{2}$. The cascade of insulating states exhibits an energy ordering which is nearly symmetric about filling factor of half electron (or hole) per superlattice site. We propose a series of charge-ordered states at commensurate filling fractions that range from generalized Wigner crystals to charge density waves. Our study lays the groundwork for utilizing moiré superlattices to simulate a wealth of quantum many-body problems that are described by the two-dimensional t-V model or spin models with long-range charge-charge and exchange interactions.