Nano/Micro system & controls Lab

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Overview

Nano/Micro system & controls Lab at Seoul National University, Seoul, South Korea. Heads: Dan Cho. Ions: Yb+.

Institution
Seoul National University
City
Seoul
Country
South Korea
Heads
Dan Cho
Ions
Yb+
Instrument
Instrument details not added yet.

Recent Publications

Characterization and active cancellation of power-line-induced motional-mode frequency noise in a trapped-ion system

Jaehun You [1,2,3], Jiyong Kang [1,2,3], Kyunghye Kim [1,2,3], Wonhyeong Choi [1,2,3], Taehyun Kim [1,2,3,4,5]

Abstract

The stability of motional-mode frequency is essential for realizing high-fidelity quantum gates in trapped-ion quantum computing. While broadband Gaussian noise has been extensively studied and mitigated using pulse shaping techniques, the impact of coherent periodic noise has remained largely unexplored. Here we report a systematic investigation of 60-Hz power-line noise and its effect on the secular frequencies of a single ${}^{171}\mathrm{Yb}^{+}$ ion. Using spin-echo Ramsey spectroscopy, we characterize the amplitude and phase of the resulting secular-frequency modulation and validate this characterization via passive phase correction of the Ramsey sequence. Building on this, we implement active cancellation by injecting a compensation tone into the set-point of a PI controller that stabilizes the trap RF drive amplitude. A phasor-fitting procedure optimizes the amplitude and phase of the compensation signal, enabling near-complete suppression of the 60-Hz component. With active cancellation engaged, the coherence time of a radial motional mode is extended from approximately 10 ms to 35 ms, consistent with the limit set by motional heating. Our results provide both a clear characterization of periodic motional-mode noise and a practical framework for its suppression in trapped-ion quantum computing platforms.

Multimode Fock-State Measurements using Dispersive Shifts in a Trapped Ion

Wonhyeong Choi [1,2,3], Jiyong Kang [1,2,3], Kyunghye Kim [1,2,3], Jaehun You [1,2,3], Kyungmin Lee [1,2,3], Taehyun Kim [1,2,3,4]

Abstract

Trapped ions naturally host multiple motional modes alongside long-lived spin qubits, providing a scalable multimode bosonic register. Efficiently characterizing such bosonic registers requires the ability to access many motional modes with limited spin resources. Here we introduce a single-spin, multimode measurement primitive using dispersive shifts in the far-detuned multimode Jaynes-Cummings interaction. We implement a Ramsey sequence that maps phonon-number-dependent phases onto the spin, thereby realizing a multimode spin-dependent rotation (SDR). We also introduce a selective-decoupling scheme that cancels the phase induced by the carrier AC-Stark shift while preserving the phonon-number-dependent phase induced by the dispersive shift. Using this SDR-based Ramsey sequence on a single trapped ion, we experimentally extract two-mode Fock-state distributions, perform parity-based filtering of two-mode motional states, and realize a nondestructive single-shot measurement of a single-mode Fock state via repeated filtering steps.

Two-Mode Bosonic State Tomography with Single-Shot Joint-Parity Measurement of a Trapped Ion

Honggi Jeon [1], Jiyong Kang [1], Wonhyeong Choi [1], Kyunghye Kim [1], Jaehun You [1], Taehyun Kim [2]

Abstract

The full characterization of a continuous-variable quantum system is a challenging problem. For the trapped-ion system, a number of methods of measuring the quantum states have been developed, including the measurement of the Q quasiprobability function and the density-matrix elements in the Fock basis, but these approaches are often slow and difficult to scale to multimode states. Here, we demonstrate a novel and powerful scheme for measuring a continuous-variable quantum state that uses the direct single-shot measurement of the joint parity of the phonon states of a trapped ion. We drive a spin-dependent bichromatic beam-splitter interaction that coherently exchanges phonons between different harmonic oscillator modes of the ion. This interaction encodes the joint-parity information into the relative phase between the two spin states, enabling measurement of the combined phonon-number parity across multiple modes in a single shot. Leveraging this capability, we directly measure multimode Wigner quasiprobability distributions to perform quantum state tomography of an entangled coherent state, and calculate various quantum informational quantities with a model-based estimation of the density matrix. We further show that the single-shot joint-parity measurement can be used to detect parity-flip errors in real time. By postselecting the parity-measurement outcomes, we experimentally demonstrate the partial recovery of coherence, effectively implementing an error-mitigation technique. Lastly, we identify the various sources of error affecting the fidelity of the spin-dependent beam-splitter operation and study the feasibility of high-fidelity operations. The interaction studied in this work can be extended to more than two modes, and is highly relevant to continuous-variable quantum computing and quantum metrology.

Radio-Frequency Pseudo-Null Induced by Light in an Ion Trap

Daun Chung [1,2,3], Yonghwan Cha [1,2,3], Hosung Shon [1,2,3], Jeonghyun Park [1,2,3], Woojun Lee [1,2,4], Kyungmin Lee [1,2,3], Beomgeun Cho [1,2,3], Kwangyeul Choi [1,2,3,5], Chiyoon Kim [1,2,3,5], Seungwoo Yoo [1,2,3,5], Suhan Kim [1,2,3,5], Uihwan Jeong [1,2,3,5], Jiyong Kang [1,2,3], Jaehun You [1,2,3], Taehyun Kim [1,2,3,4,5,6]

Abstract

In a linear radio-frequency (rf) ion trap, the rf null is the point of zero electric field in the dynamic trapping potential where the ion motion is approximately harmonic. When displaced from the rf null, the ion is superimposed by fast oscillations known as micromotion, which can be probed through motion-sensitive light-atom interactions. In this work, we report on the emergence of the rf pseudo-null, a locus of points where the ion responds to light as if it were at the true rf null, despite being displaced from it. The phenomenon is fully explained by accounting for the general two-dimensional structure of micromotion and is experimentally verified under various potential configurations, with observations in great agreement with numerical simulations. The rf pseudo-null manifests as a line in a two-dimensional parameter space, determined by the geometry of the incident light and its overlap with the motional structure of the ion. The true rf null occurs uniquely at the concurrent point of the pseudo-null lines induced by different light sources.

Efficient Quantum Frequency Conversion of Ultra-Violet Single Photons from a Trapped Ytterbium Ion

Seungwoo Yu [1,2,3,4], Kyungmin Lee [1,2,4], Sumin Park [2,4,5], Kyunghye Kim [1,2,4], Junhong Goo [1,2], Jeonghyun Park [1,2,4], Taehyun Kim [1,2,3,4,6,7]

Abstract

Ion trap system is a leading candidate for quantum network privileged by its long coherence time, high-fidelity gate operations, and the ion-photon entanglement that generates an ideal pair of a stationary memory qubit and a flying communication qubit. Rapid developments in nonlinear quantum frequency conversion techniques have enhanced the potential for constructing a trapped ion quantum network via optical fiber connections. The generation of long-distance entanglement has been demonstrated with ions such as Ca$^{+}$ and Ba$^{+}$, which emit photons in visible or near-infrared range naturally. On the other hand, as the qubit-native photons reside in ultra-violet (UV) spectrum, the Yb$^{+}$ ion has not been considered as a strong competitor for telecommunication qubits despite extensive research on it. Here, we demonstrate an efficient difference-frequency conversion of UV photons, emitted from a trapped Yb$^{+}$ ion, into a visible range. We provide experimental evidence that confirms the converted photons are radiated from the Yb$^{+}$ ion. Our results provide a crucial step toward realizing a long-distance trapped ion quantum network based on Yb$^{+}$ ions through quantum frequency conversion.

Transport Characteristics and Modelling of ST40 Hot Ion Plasmas

MS Anastopoulos Tzanis, MR Hardman, Y Zhang, X Zhang, A Sladkomedova, A Dnestrovskii, YS Na, JH Lee, SJ Park, TO Gorman, H Lowe, M Romanelli, M Sertoli, M Gemmel, J Woods, HV Willett, ST40 Team [1]

Abstract

In this paper, the turbulent transport properties of ST40 hot ion plasmas are examined and fully predictive time evolving modelling of a hot ion plasma pulse was performed. Understanding turbulent transport on spherical tokamaks (STs) is challenging due to their unique geometry characteristics. ST40 hot ion plasmas are typically unstable to ion scale Trapped Electron Modes (TEMs) and Ubiquitous Modes (UMs), driven from the kinetic response of trapped particles and passing ions, and electron scale Electron Temperature Gradient Modes (ETGs) at the edge of the plasma. A comparison between the linear unstable modes of the gyro-kinetic code GS2 and the gyro-fluid code TGLF showed that both models agree to a satisfactory level. However, some discrepancy was observed at the core of the plasma where a large fraction of beams ions exists, and electromagnetic effects are potentially important. Turbulent fluxes were also observed to be somewhat overpredicted with TGLF. The core heat ion transport is observed to be close to neoclassical levels due to turbulence suppression from high rotation and fast ion stabilisation, while the edge region is dominated by anomalous transport in both ions and electrons. As a result, enhanced energy confinement is observed in those plasmas driven by the reduced turbulent core region and the confined beam ions. Fully predictive simulations using the ASTRA transport solver coupled with SPIDER, NUBEAM, NCLASS and TGLF together with a novel reduced scrape of layer (SOL) model for the simulation of the last closed flux surface (LCFS) boundary conditions was attempted. Agreement in global quantities but also kinetic profiles between the predictive and interpretative modelling as well as experimental measurements was observed.

Ion-Trap Chip Architecture Optimized for Implementation of Quantum Error-Correcting Code

Jeonghoon Lee [1,2], Hyeongjun Jeon [1,2], Taehyun Kim [1,2,3,4,5,6]

Abstract

We propose a scalable trapped-ion quantum-computing architecture that efficiently incorporates quantum error correction. The chip design exploits orthogonal qubit connectivity by assigning horizontal trap regions to transversal logical gates and vertical regions to nontransversal gates and syndrome extraction, thereby enabling universal gate operations with minimal ion shuttling and reduced hardware complexity. Using a dedicated software tool, we evaluate the architecture on several benchmark algorithms and scheduling policies for two-dimensional color code of varying code distance. Our results demonstrate that increasing the code distance by two reduces the effective logical two-qubit gate error probability by approximately two orders of magnitude, reaching values as low as $10^{-8}$ with the $[[31, 1, 7]]$ color code. This improvement substantially expands the range of algorithms that can be executed reliably, up to scales of a few thousand logical qubits, depending on the algorithmic structure. Overall, these findings validate the practicality and scalability of the proposed architecture and its control strategies, highlighting a viable route toward fault-tolerant, trapped-ion quantum computing.

A silicon-based ion trap chip protected from semiconductor charging

Daun Chung [1,2], Kwangyeul Choi [1,2,3], Woojun Lee [1,2,4], Chiyoon Kim [1,2,3], Hosung Shon [1,2], Jeonghyun Park [1,2], Beomgeun Cho [1,2], Kyungmin Lee [1,2], Suhan Kim [1,2,3], Seungwoo Yoo [1,2,3], Eui Hwan Jung [1,2,3], Changhyun Jung [1,2,3], Jiyong Kang [1,2], Kyunghye Kim [1,2], Roberts Berkis [5], Tracy Northup [5,6], Dong-Il "Dan'' Cho, Taehyun Kim [1,2,3,4,7,8]

Abstract

Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.

Computing Riemann zeros with light scattering

Sunkyu Yu [1], Xianji Piao [2], Namkyoo Park [3]

Abstract

Finding hidden order within disorder is a common interest in material science, wave physics, and mathematics. The Riemann hypothesis, stating the locations of nontrivial zeros of the Riemann zeta function, tentatively characterizes statistical order in the seemingly random distribution of prime numbers. This famous conjecture has inspired various connections with different branches of physics, recently with non-Hermitian physics, quantum field theory, trapped-ion qubits, and hyperuniformity. Here we develop the computing platform for the Riemann zeta function by employing classical scattering of light. We show that the Riemann hypothesis suggests the landscape of semi-infinite optical scatterers for the perfect reflectionless condition under the Born approximation. To examine the validity of the scattering-based computation, we investigate the asymptotic behaviours of suppressed reflections with the increasing number of scatterers and the emergence of multiple scattering. The result provides another bridge between classical physics and the Riemann zeros, exhibiting the design of wave devices inspired by number theory.

Photo-induced charge carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions

Woojun Lee [1,2,3], Daun Chung [1,2], Honggi Jeon [1,2], Beomgeun Cho [1,2], KwangYeul Choi [1,2,4], SeungWoo Yoo [1,2,4], Changhyun Jung [2,4,5], Junho Jeong [2,4,5], Changsoon Kim [4,6,2,5], Dong-Il "Dan'' Cho, Taehyun Kim [1,2,3,4,7]

Abstract

Ion trap systems built upon microfabricated chips have emerged as a promising platform for quantum computing to achieve reproducible and scalable structures. However, photo-induced charging of materials in such chips can generate undesired stray electric fields that disrupt the quantum state of the ion, limiting high-fidelity quantum control essential for practical quantum computing. While crude understanding of the phenomena has been gained heuristically over the past years, explanations for the microscopic mechanism of photo-generated charge carrier dynamics remains largely elusive. Here, we present a photo-induced charging model for semiconductors, whose verification is enabled by a systematic interaction between trapped ions and photo-induced stray fields from exposed silicon surfaces in our chip. We use motion-sensitive qubit transitions to directly characterize the stray field and analyze its effect on the quantum dynamics of the trapped ion. In contrast to incoherent errors arising from the thermal motion of the ion, coherent errors are induced by the stray field, whose effect is significantly imprinted during the quantum control of the ion. These errors are investigated in depth and methods to mitigate them are discussed. Finally, we extend the implications of our study to other photo-induced charging mechanisms prevalent in ion traps.

Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages

Woojun Lee [1,2,3], Daun Chung [1,2], Jiyong Kang [1,2], Honggi Jeon [2,4], Changhyun Jung [2,5,6], Dong-Il "Dan" Cho, Taehyun Kim [1,2,3,5,7]

Abstract

Excess micromotion is detrimental to accurate qubit control of trapped ions, thus measuring and minimizing it is crucial. In this paper, we present a simple approach for measuring and suppressing excess micromotion of trapped ions by leveraging the existing laser-driven qubit transition scheme combined with direct scanning of dc voltages. The compensation voltage is deduced by analyzing the Bessel expansion of a scanned qubit transition rate. The method provides a fair level of sensitivity for practical quantum computing applications, while demanding minimal deviation of trap condition. By accomplishing compensation of excess micromotion in the qubit momentum-excitation direction, the scheme offers an additional avenue for excess micromotion compensation, complementing existing compensation schemes.

Experimental Realization of Entangled Coherent States in Two-dimensional Harmonic Oscillators of a Trapped Ion

Honggi Jeon [1,2], Jiyong Kang [2,3], Jaeun Kim [2,3], Wonhyeong Choi [2,3,4], Kyunghye Kim [2,3], Taehyun Kim [2,3,4,5,6]

Abstract

Entangled coherent states play pivotal roles in various fields such as quantum computation, quantum communication, and quantum sensing. We experimentally demonstrate the generation of entangled coherent states with the two-dimensional motion of a trapped ion system. Using Raman transitions with appropriate detunings, we simultaneously drive the red and blue sidebands of the two transverse axes of a single trapped ion and observe multi-periodic entanglement and disentanglement of its spin and two-dimensional motion. Then, by measuring the spin state, we herald entangled coherent states of the transverse motions of the trapped ion and observe the corresponding modulation in the parity of the phonon distribution of one of the harmonic oscillators. Lastly, we trap two ions in a linear chain and realize Molmer-Sorensen gate using two-dimensional motion.

A New Approach to Quantum Computing Multi-Qubit Generation and Development of Quantum Computing Platform with Magnetic Resonance Imaging Techniques

Zang-Hee Cho [1], Young-Don Son [2], Hyejin Jeong [1], Young-Bo Kim [3], Sun Ha Paek [4], Dae-Hwan Suk [5], Haigun Lee [5,6]

Abstract

Explosive increase of interest in quantum computing has resulted in various proposals for generation of quantum bits or qubits, the basic quantum computing unit. The superconducting qubits of Josephson Junction are the most widely accepted and currently used, while the Ion-trap and a similar molecule-based qubits have been proposed more recently. In these methods, each qubit is generated individually with great effort. Here we proposed a new technique using magnetic resonance imaging (MRI)-based qubit generation, by which multiple qubits can be generated. Simultaneously this provides a complete qubit platform for quantum computing. Central to the proposed method is the simultaneous generation of multiple qubits using the 'gradient' concept together with multiple radiofrequency coils, one for all qubits, and others for individual qubits with each small Q-coil. Another key concept is the time-encoded probability amplitude (TEPA) technique, using individual Q-coils together with the spin-echo series in each qubit incorporating readout gating for time-encoding. This MRI-based qubit-generation and qubit-encoding technique allowed us to develop an entirely new class of quantum computing platform. Our newly proposed MRI-based qubits are well-suited to currently available electronics, superconducting and semiconductor technologies, as well as nuclear magnetic resonance and MRI physics and technology.

Microelectromechanical-System-Based Design of a High-Finesse Fiber Cavity Integrated with an Ion Trap

Moonjoo Lee [1], Minjae Lee [2], Seokjun Hong [2,1], Klemens Schüppert, Yeong-Dae Kwon [3], Taehyun Kim [4], Yves Colombe [1], Tracy E. Northup [1,2], Dong-Il "Dan" Cho, Rainer Blatt [1,5]

Abstract

We present a numerical study of a MEMS-based design of a fiber cavity integrated with an ion trap system. Each fiber mirror is supported by a microactuator that controls the mirror's position in three dimensions. The mechanical stability is investigated by a feasibility analysis showing that the actuator offers a stable support of the fiber. The actuators move the fibers' positions continuously with a stroke of more than 10 $μ$m, with mechanical resonance frequencies on the order of kHz. A calculation of the trapping potential shows that a separation between ion and fiber consistent with strong ion-cavity coupling is feasible. Our miniaturized ion-photon interface constitutes a viable approach to integrated hardware for quantum information.

Atomistic mechanism for trapped-charge driven degradation of perovskite solar cells

Kwisung Kwak [1,2], Eunhak Lim [3], Namyoung Ahn [1,2], Jiyoung Heo [4], Kijoon Bang [1,2], Seong Keun Kim [3], Mansoo Choi [1,2]

Abstract

It is unmistakably paradoxical that the weakest point of the photoactive organic-inorganic hybrid perovskite is its instability against light. Why and how perovskites break down under light irradiation and what happens at the atomistic level during the degradation still remains unanswered. In this paper, we revealed the fundamental origin and mechanism for irreversible degradation of hybrid perovskite materials from our new experimental results and ab initio molecular dynamics (AIMD) simulations. We found that the photo-generated charges trapped along the grain boundaries of the perovskite crystal result in oxygen-induced irreversible degradation in air even in the absence of moisture. The present result, together with our previous experimental finding on the same critical role of trapped charges in the perovskite degradation under moisture, suggests that the trapped charges are the main culprit in both the oxygen- and moisture-induced degradation of perovskite materials. More detailed roles of oxygen and water molecules were investigated by tracking the atomic motions of the oxygen- or water-covered CH3NH3PbI3(MAPbI3) perovskite crystal surface with trapped charges via AIMD simulation. In the first few picoseconds of our simulation, trapped charges start disrupting the crystal structure, leading to a close-range interaction between oxygen or water molecules and the compositional ions of MAPbI3. We found that there are different degradation pathways depending on both the polarity of the trapped charge and the kind of gas molecule. Especially, the deprotonation of organic cations was theoretically predicted for the first time in the presence of trapped anionic charges and water molecules. We confirmed that a more structurally stable, multi-component perovskite material(MA0.6FA0.4PbI2.9Br0.1) exhibited a much longer lifespan than MAPbI3 under light irradiation even in 100% oxygen ambience.

Trapped charge driven degradation of perovskite solar cells

Namyoung Ahn [1,2], Kwisung Kwak [1,2], Min Seok Jang [1], Heetae Yoon [1,2], Byung Yang Lee [3], Jong-Kwon Lee [1], Peter V. Pikhitsa [1], Junseop Byun [1,2], Mansoo Choi [1,2]

Abstract

Perovskite solar cells have shown fast deterioration during actual operation even with encapsulation, but its mechanism has been elusive. We found the fundamental mechanism for irreversible degradation of perovskite materials in which trapped charges regardless of the polarity play a decisive role. A novel experimental setup utilizing different polarity ions revealed that the moisture induced irreversible dissociation of perovskite materials is triggered by charges trapped along grain boundaries. Our finding clearly explained the intriguing observations why light soaking induces irreversible degradation while in the dark, moisture only causes reversible hydration, and why degradation begins from different side of interface for different charge extraction layers. The deprotonation of organic cations by trapped charge induced local electric field is attributed to the initiation of irreversible decomposition.

Dissertations

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