J-P. Likforman

The realization of a scalable quantum internet requires efficient light-matter interfaces that map stationary qubits onto photonic carriers for long-distance transmission. A central challenge is the generation of entangled photons simultaneously compatible with single-emitter transitions and low-loss telecom fiber infrastructure. Spontaneous parametric down-conversion in integrated photonic platforms offers a promising route toward this goal. Among available material systems, AlGaAs is particularly attractive due to its large second-order nonlinearity and strong potential for monolithic integration. However, engineering the spectral and spatial properties of the generated quantum states requires the simultaneous optimization of numerous geometric and material parameters, a task remaining computationally demanding for conventional numerical approaches. To address this challenge and enable rapid and high-fidelity modeling of complex nonlinear photonic devices, we develop an inverse-design framework based on neural network surrogate models. Using this readily extendable method, we design a transversely pumped AlGaAs waveguide microcavity that produces polarization-entangled photon pairs in distinct spatial modes and frequency channels, one at 1092 nm, resonant with a $^{88}\text{Sr}^{+}$ transition, and the other at 1550 nm in the telecom C-band. This device establishes a direct photonic interface between trapped-ion qubits and long-haul fiber networks, providing a scalable pathway toward hybrid quantum network architectures.

In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.

We designed and operated a surface ion trap, with an ion-substrate distance of 500\mum, realized with standard printed-circuit-board techniques. The trap has been loaded with up to a few thousand Sr+ ions in the Coulomb-crystal regime. An analytical model of the pseudo-potential allowed us to determine the parameters that drive the trap into anisotropic regimes in which we obtain large (N>150) purely 2D ion Coulomb crystals. These crystals may open a simple and reliable way to experiments on quantum simulations of large 2D systems.