L. Guidoni

Deep-Learning-Designed AlGaAs Interface Linking Trapped Ions to Telecom Quantum Networks

I. P. De Simeone, G. Maltese [2], V. Cambier [1], J-P. Likforman [1], M. Ravaro [1], L. Guidoni [1], F. Baboux [1], S. Ducci [1]

Abstract

The realization of a scalable quantum internet requires efficient light-matter interfaces that map stationary qubits onto photonic carriers for long-distance transmission. A central challenge is the generation of entangled photons simultaneously compatible with single-emitter transitions and low-loss telecom fiber infrastructure. Spontaneous parametric down-conversion in integrated photonic platforms offers a promising route toward this goal. Among available material systems, AlGaAs is particularly attractive due to its large second-order nonlinearity and strong potential for monolithic integration. However, engineering the spectral and spatial properties of the generated quantum states requires the simultaneous optimization of numerous geometric and material parameters, a task remaining computationally demanding for conventional numerical approaches. To address this challenge and enable rapid and high-fidelity modeling of complex nonlinear photonic devices, we develop an inverse-design framework based on neural network surrogate models. Using this readily extendable method, we design a transversely pumped AlGaAs waveguide microcavity that produces polarization-entangled photon pairs in distinct spatial modes and frequency channels, one at 1092 nm, resonant with a $^{88}\text{Sr}^{+}$ transition, and the other at 1550 nm in the telecom C-band. This device establishes a direct photonic interface between trapped-ion qubits and long-haul fiber networks, providing a scalable pathway toward hybrid quantum network architectures.

High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit

T. P. Harty [1], D. T. C. Allcock [1], C. J. Ballance [1], L. Guidoni [1,2], H. A. Janacek [1], N. M. Linke [1], D. N. Stacey [1], D. M. Lucas [1]

Abstract

We implement all single-qubit operations with fidelities significantly above the minimum threshold required for fault-tolerant quantum computing, using a trapped-ion qubit stored in hyperfine "atomic clock" states of $^{43}$Ca$^+$. We measure a combined qubit state preparation and single-shot readout fidelity of 99.93%, a memory coherence time of $T^*_2=50$ seconds, and an average single-qubit gate fidelity of 99.9999%. These results are achieved in a room-temperature microfabricated surface trap, without the use of magnetic field shielding or dynamic decoupling techniques to overcome technical noise.

Large 2D Coulomb crystals in a radio frequency surface ion trap

B. Szymanski [1], R. Dubessy [1], B. Dubost [1], S. Guibal [1], J. -P. Likforman [1], L. Guidoni [1]

Abstract

We designed and operated a surface ion trap, with an ion-substrate distance of 500\mum, realized with standard printed-circuit-board techniques. The trap has been loaded with up to a few thousand Sr+ ions in the Coulomb-crystal regime. An analytical model of the pseudo-potential allowed us to determine the parameters that drive the trap into anisotropic regimes in which we obtain large (N>150) purely 2D ion Coulomb crystals. These crystals may open a simple and reliable way to experiments on quantum simulations of large 2D systems.

Reduction of heating rate in a microfabricated ion trap by pulsed-laser cleaning

D T C Allcock [1], L Guidoni [1,2], T P Harty [1], C J Ballance [1], M G Blain [3], A M Steane [1], D M Lucas [1]

Abstract

Laser-cleaning of the electrodes in a planar micro-fabricated ion trap has been attempted using ns pulses from a tripled Nd:YAG laser at 355nm. The effect of the laser pulses at several energy density levels has been tested by measuring the heating rate of a single 40Ca+ trapped ion as a function of its secular frequency. A reduction of the electric-field noise spectral density by ~50% has been observed and a change in the frequency dependence also noticed. This is the first reported experiment where the "anomalous heating" phenomenon has been reduced by removing the source as opposed to reducing its thermal driving by cryogenic cooling. This technique may open the way to better control of the electrode surface quality in ion microtraps.