Jiawei Wang

This work presents the design and fabrication of a compact permanent magnet based on an optimized stacked structure of fifteen NdFeB rings. The tunable NS-SN-NS configuration generates a central magnetic field of 0.8T with a reconstructed uniformity of 99.988% within a 1mm radius spherical volume. The remaining field inhomogeneity is dominated by radial dipole components. Requiring neither cryogenics nor external power, this design provides a high-performance and cost-effective alternative to superconducting magnets for applications in ion-trap development and Fourier-transform ion cyclotron resonance mass spectrometry.

Penning traps, renowned for their unparalleled precision in determining fundamental properties such as mass and magnetic moments, are cornerstone instruments in modern physics. Their applications span from nuclear structure studies to stringent tests of quantum electrodynamics and CPT invariance. Although Penning traps have been demonstrated for fundamental studies, often employing superconducting magnets, their high cost and operational complexity remain challenges. In this work, we report the development of a compact cryogenic Penning trap that utilizes a permanent magnet to provide a confining magnetic field, offering a more economical and flexible alternative. We have successfully demonstrated all core functionalities of this system, including ion generation, transport, confinement, manipulation, and signal detection. This compact trap not only serves as a vital technical testbed for the development of the Shanghai Penning Trap, but also establishes a cryogenic Penning-trap experiment platform for ion trapping and cooling applications as well as envisaged spectroscopic studies applications.

Modulation and control of lasers and optical signals is necessary for trapped-ion and cold neutral atom quantum systems. Given the diversity of atomic species, experimental modalities, and architectures, integrated optical modulators designed to operate across the visible to near-infrared spectrum are a key step towards portable, robust, and compact quantum computers, clocks, and sensors. Integrated optical modulators that are wavelength-independent, CMOS-compatible, and capable of maintaining low waveguide losses and a high resonator quality factor, DC-coupled broadband frequency response, and low power consumption, are essential for scalable photonic integration. Yet progress towards these goals has remained limited. Here we demonstrate four types of integrated stress-optic lead zirconate titanate (PZT) silicon nitride modulators: a coil Mach-Zehnder modulator, a coil pure phase modulator, and bus-coupled and add-drop ring resonator modulators, with operation from 493 nm to 780 nm. The coil MZM operates at 532 nm with a V$π$ of 2.8V, a 0.4 MHz 3-dB bandwidth, and an extinction ratio of 21.5dB. The coil phase modulator operates at 493 nm with a V$π$ of 2.8V and low residual amplitude modulation of -34 dB at a 1kHz offset. The bus-coupled ring resonator modulator operates at 493 nm and the add-drop ring resonator modulator operates at 780 nm. The ring-based modulators have an intrinsic quality factor of 3.4 million and 1.9 million, a linear tuning strength of 0.9 GHz/V and 1 GHz/V, and a 3-dB bandwidth of 2.6 MHz and 10 MHz, respectively. All four modulator designs maintain the low optical waveguide loss of SiN, are DC coupled with broadband frequency response, operate independent of wavelength, and consume only tens of nW per actuator. Such solutions unlock the potential for further integration with other precision SiN components to realize chip-scale atomic and quantum systems.

Integrating precise, stable, ultra-low noise visible light lasers into atomic systems is critical for advancing quantum information sciences and improving scalability and portability. Trapped ions are a leading approach for high-fidelity quantum computing, high-accuracy optical clocks, and precision quantum sensors. However, current ion-based systems rely on bulky, lab-scale precision lasers and optical stabilization cavities for optical clock and qubit operations, constraining the size, weight, scalability, and portability of atomic systems. Chip-scale integration of ultra-low noise lasers and reference cavities operating directly at optical clock transitions and capable of qubit and clock operations will represent a major transformation in atom and trapped ion-based quantum technologies. However, this goal has remained elusive. Here we report the first demonstration of chip-scale optical clock and qubit operations on a trapped ion using a photonic integrated direct-drive visible wavelength Brillouin laser stabilized to an integrated 3-meter coil-resonator reference cavity and the optical clock transition of a $^{88}$Sr$^+$ ion trapped on a surface electrode chip. We also demonstrate for the first time, to the best of our knowledge, trapped-ion spectroscopy and qubit operations such as Rabi oscillations and high fidelity (99%) qubit state preparation and measurement (SPAM) using direct drive integrated photonic technologies without bulk optic stabilization cavities or second harmonic generation. Our chip-scale stabilized Brillouin laser exhibits a 6 kHz linewidth with the 0.4 Hz quadrupole transition of $^{88}$Sr$^+$ and a self-consistent coherence time of 60 $μ$s via Ramsey interferometry on the trapped ion qubit. Furthermore, we demonstrate the stability of the locked Brillouin laser to 5$\times10^{-13}/ \sqrtτ$ at 1 second using dual optical clocks.