Jules Stuart

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped $^{88}\text{Sr}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $μ$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors. Trapped atomic ions form the basis of high-fidelity quantum information processors and high-accuracy optical clocks. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. Here we demonstrate a surface-electrode ion-trap chip using integrated waveguides and grating couplers, which delivers all the wavelengths of light required for ionization, cooling, coherent operations, and quantum-state preparation and detection of Sr+ qubits. Laser light from violet to infrared is coupled onto the chip via an optical-fiber array, creating an inherently stable optical path, which we use to demonstrate qubit coherence that is resilient to platform vibrations. This demonstration of CMOS-compatible integrated-photonic surface-trap fabrication, robust packaging, and enhanced qubit coherence is a key advance in the development of portable trapped-ion quantum sensors and clocks, providing a way toward the complete, individual control of larger numbers of ions in quantum information processing systems.

We use a co-trapped ion ($^{88}\mathrm{Sr}^{+}$) to sympathetically cool and measure the quantum state populations of a memory-qubit ion of a different atomic species ($^{40}\mathrm{Ca}^{+}$) in a cryogenic, surface-electrode ion trap. Due in part to the low motional heating rate demonstrated here, the state populations of the memory ion can be transferred to the auxiliary ion by using the shared motion as a quantum state bus and measured with an average accuracy of 96(1)%. This scheme can be used in quantum information processors to reduce photon-scattering-induced error in unmeasured memory qubits.

We report on a method for measuring the branching ratios of dipole transitions of trapped atomic ions by performing nested sequences of population inversions. This scheme is broadly applicable and does not use ultrafast pulsed or narrow linewidth lasers. It is simple to perform and insensitive to experimental variables such as laser and magnetic field noise as well as ion heating. To demonstrate its effectiveness, we make the most accurate measurements thus far of the branching ratios of both 5P1/2 and 5P3/2 states in 88Sr+ with sub-1% uncertainties. We measure 17.175(27) for the branching ratio of 5P1/2-5S1/2, 15.845(71) for 5P3/2-5S1/2, and 0.05609(21) for 5P3/2-4D5/2, ten- fold and thirty-fold improvements in precision for 5P1/2 and 5P3/2 branching ratios respectively over the best previous experimental values.