Samuel J. Hile

Noise resilience of quantum information processing is a crucial precondition to reach the fault-tolerance threshold. While resilience to many types of noise can be achieved through suitable control schemes, resilience to amplitude noise seems to be elusive within the common harmonic approximation for the bus mode of trapped ions. We show that weak an-harmonicities admit control schemes that achieve amplitude noise-resilience consistent with state-of-the-art experimental requirements, and that the required an-harmonicities can be achieved with current standards of micro-structured traps or even the intrinsically an-harmonic Coulomb interaction. This approach applies broadly to any platform that employs a bosonic bus as a qubit coupler.

Optimal quantum control of continuous variable systems poses a formidable computational challenge because of the high-dimensional character of the system dynamics. The framework of quantum invariants can significantly reduce the complexity of such problems, but it requires the knowledge of an invariant compatible with the Hamiltonian of the system in question. We explore the potential of a Gaussian invariant that is suitable for quadratic Hamiltonians with any given number of motional degrees of freedom for quantum optimal control problems that are inspired by current challenges in ground-state-to-ground-state shuttling of trapped-ions.

A major challenge for quantum computers is the scalable simultaneous execution of quantum gates. One approach to address this in trapped ion quantum computers is the implementation of quantum gates based on static magnetic field gradients and global microwave fields. In this paper, we present the fabrication of surface ion traps with integrated copper current carrying wires embedded inside the substrate below the ion trap electrodes, capable of generating high magnetic field gradients. The copper layer's measured sheet resistance of 1.12 m$Ω$/sq at room temperature is sufficiently low to incorporate complex designs, without excessive power dissipation at high currents causing a thermal runaway. At a temperature of 40 K the sheet resistance drops to 20.9 $μΩ$/sq giving a lower limit for the residual resistance ratio of 100. Continuous currents of 13 A can be applied, resulting in a simulated magnetic field gradient of 144 T/m at the ion position, which is 125 $μ$m from the trap surface for the particular anti-parallel wire pair in our design.

Microfabricated ion-trap devices offer a promising pathway towards scalable quantum computing. Research efforts have begun to focus on the engineering challenges associated with developing large-scale ion-trap arrays and networks. However, increasing the size of the array and integrating on-chip electronics can drastically increase the power dissipation within the ion-trap chips. This leads to an increase in the operating temperature of the ion-trap and limits the device performance. Therefore, effective thermal management is an essential consideration for any large-scale architecture. Presented here is the development of a modular cooling system designed for use with multiple ion-trapping experiments simultaneously. The system includes an extensible cryostat that permits scaling of the cooling power to meet the demands of a large network. Following experimental testing on two independent ion-trap experiments, the cooling system is expected to deliver a net cooling power of 111 W at ~70 K to up to four experiments. The cooling system is a step towards meeting the practical challenges of operating large-scale quantum computers with many qubits.