Shuo Zhang

Conventional theoretical studies on the ground-state laser cooling of a trapped ion have mostly focused on the weak sideband coupling (WSC) regime, where the cooling rate is inverse proportional to the linewidth of the excited state. In a recent work~[New J. Phys. 23, 023018 (2021)], we proposed a theoretical framework to study the ground state cooling of a trapped ion in the strong sideband coupling (SSC) regime, under the assumption of a vanishing carrier transition. Here we extend this analysis to more general situations with nonvanishing carrier transitions, where we show that by properly tuning the coupling lasers a cooling rate proportional to the linewidth can be achieved. Our theoretical predictions closely agree with the corresponding exact solutions in the SSC regime, which provide an important theoretical guidance for sideband cooling experiments.

We theoretically propose and experimentally demonstrate a parallel-electromagnetically-induced transparency (parallel-EIT) cooling technique for ion crystals in the Paul trap. It has less stringent requirements on the cooling resonance condition than the standard electromagnetically-induced transparency (EIT) cooling, thus allowing, in principle, to simultaneously cool the motional mode spectrum with an arbitrary range. A proof-of-principle validation for this cooling scheme is experimentally demonstrated with up to 4 trapped 40Ca+ ions. We observe simultaneous near-ground-state cooling for all motional modes with best average phonon number about 0.2. By tuning the trap frequency in a large range to imitate a broadband motional mode spectrum, we can still reach almost the same cooling limit for all the modes while standard EIT cooling shows limited cooling range. Our method has a simple experimental configuration, requiring only appropriate modulation of the probe beam of standard EIT cooling, and can be applied to various types of ions (e.g., 171Yb+, 40Ca+). This cooling scheme provides a powerful tool for the initialization of the trapped-ion quantum computers and simulators.

Cooling down a trapped ion into its motional ground state is a central step for trapped ions based quantum information processing. State of the art cooling schemes often work under a set of optimal cooling conditions derived analytically using a perturbative approach, in which the sideband coupling is assumed to be the weakest of all the relevant transitions. As a result the cooling rate is severely limited. Here we propose to use quantum control technique powered with automatic differentiation to speed up the classical cooling schemes. We demonstrate the efficacy of our approach by applying it to find the optimal cooling conditions for classical sideband cooling and electromagnetically induced transparency cooling schemes, which are in general beyond the weak sideband coupling regime. Based on those numerically found optimal cooling conditions, we show that faster cooling can be achieved while at the same time a low average phonon occupation can be retained.

Electromagnetically induced transparency (EIT) cooling has established itself as one of the most widely used cooling schemes for trapped ions during the past twenty years. Compared to its alternatives, EIT cooling possesses important advantages such as a tunable effective linewidth, a very low steady state phonon occupation, and applicability for multiple ions. However, existing analytic expression for the steady state phonon occupation of EIT cooling is limited to the zeroth order of the Lamb-Dicke parameter. Here we extend such calculations and present the explicit expression to the second order of the Lamb-Dicke parameter. We discuss several implications of our refined formula and are able to resolve certain difficulties in existing results.

Trapped ion in the Lamb-Dicke regime with the Lamb-Dicke parameter $η\ll1$ can be cooled down to its motional ground state using sideband cooling. Standard sideband cooling works in the weak sideband coupling limit, where the sideband coupling strength is small compared to the natural linewidth $γ$ of the internal excited state, with a cooling rate much less than $γ$. Here we consider cooling schemes in the strong sideband coupling regime, where the sideband coupling strength is comparable or even greater than $γ$. We derive analytic expressions for the cooling rate and the average occupation of the motional steady state in this regime, based on which we show that one can reach a cooling rate which is proportional to $γ$, while at the same time the steady state occupation increases by a correction term proportional to $η^{2}$ compared to the weak sideband coupling limit. We demonstrate with numerical simulations that our analytic expressions faithfully recover the exact dynamics in the strong sideband coupling regime.

We propose a new dark-state cooling method of trapped ion systems in the Lamb-Dicke limit. With application of microwave dressing the ion, we can obtain two electromagnetically induced transparency structures. The heating effects caused by the carrier and the blue sideband transition vanish due to the EIT effects and the final mean phonon numbers can be much less than the recoil limit. Our scheme is robust to fluctuations of microwave power and laser intensities which provides a broad cooling bandwidth to cool motional modes of a linear ion chain. Moreover, it is more suitable to cool four-level ions on a large-scale ion chip.