I. L. Chuang

Trapped atomic ions are natural candidates for quantum information processing and have the potential to realize or improve quantum computing, sensing, and networking. These applications often require the collection of individual photons emitted from ions into guided optical modes, in some cases for the production of entanglement between separated ions. Proof-of-principle demonstrations of such photon collection from trapped ions have been performed using high-numerical-aperture lenses or cavities and single-mode fibers, but integrated photonic elements in ion-trap structures offer advantages in scalability and manufacturabilty over traditional optics. In this paper we analyze structures monolithically fabricated with an ion trap for collecting ion-emitted photons, coupling them into waveguides, and manipulating them via interference. We calculate geometric limitations on collection efficiency for this scheme, simulate a single-layer grating that shows performance comparable to demonstrated free-space optics, and discuss practical fabrication and fidelity considerations. Based on this analysis, we conclude that integrated photonics can support scalable systems of trapped-ions that can distribute quantum information via photon-mediated entanglement.

Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g. due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance, micron-scale, microfabricated traps amenable to high-speed, high-fidelity manipulation of ion arrays. Here we investigate ablation-based ion loading into surface-electrode traps of different sizes to test a model describing ion loading probability as a function of effective trap volume and other trap parameters. We demonstrate loading of ablated and photoionized barium in two cryogenic surface-electrode traps with 730 $μ$m and 50 $μ$m ion-electrode distances. Our loading success probability agrees with a predictive analytical model, providing insight for the confinement of limited-quantity species of interest for quantum computing, simulation, and sensing.

Quantum computers, much like their classical counterparts, will likely benefit from flexible qubit encodings that can be matched to different tasks. For trapped ion quantum processors, a common way to access multiple encodings is to use multiple, co-trapped atomic species. Here, we outline an alternative approach that allows flexible encoding capabilities in single-species systems through the use of long-lived metastable states as an effective, programmable second species. We describe the set of additional trapped ion primitives needed to enable this protocol and show that they are compatible with large-scale systems that are already in operation.

Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We demonstrate the cryogenic operation of an ion-trap that incorporates monolithically-integrated high-voltage CMOS electronics ($\pm 8\mathrm{V}$ full swing) to generate surface-electrode control potentials without the need for external, analog voltage sources. A serial bus programs an array of 16 digital-to-analog converters (DACs) within a single chip that apply voltages to segmented electrodes on the chip to control ion motion. Additionally, we present the incorporation of an integrated circuit that uses an analog switch to reduce voltage noise on trap electrodes due to the integrated amplifiers by over $50\mathrm{dB}$. We verify the function of our integrated electronics by performing diagnostics with trapped ions and find noise and speed performance similar to those we observe using external control elements.

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

A scalable, multiplexed ion trap for quantum information processing is fabricated and tested. The trap design and fabrication process are optimized for scalability to small trap size and large numbers of interconnected traps, and for integration of control electronics and optics. Multiple traps with similar designs are tested with Cd+, Mg+, and Sr+ ions at room temperature and with Sr+ at 6 K, with respective ion lifetimes of 90 s, 300 +/- 30 s, 56 +/- 6 s, and 4.5 +/- 1.1 hours. The motional heating rate for Mg+ at room temperature and a trap frequency of 1.6 MHz is measured to be 7 +/- 3 quanta per millisecond. For Sr+ at 6 K and 540 kHz the heating rate is measured to be 220 +/- 30 quanta per second.

We propose an approach for studying quantum information and performing high resolution spectroscopy of rotational states of trapped molecular ions using an on-chip superconducting microwave resonator. Molecular ions have several advantages over neutral molecules. Ions can be loaded into deep (1 eV) RF traps and are trapped independent of the electric dipole moment of their rotational transition. Their charge protects them from motional dephasing and prevents collisional loss, allowing 1 s coherence times when used as a quantum memory, with detection of single molecules possible in <10 ms. An analysis of the detection efficiency and coherence properties of the molecules is presented.

We present two simple cryogenic RF ion trap systems in which cryogenic temperatures and ultra high vacuum pressures can be reached in as little as 12 hours. The ion traps are operated either in a liquid helium bath cryostat or in a low vibration closed cycle cryostat. The fast turn around time and availability of buffer gas cooling made the systems ideal for testing surface-electrode ion traps. The vibration amplitude of the closed cycled cryostat was found to be below 106 nm. We evaluated the systems by loading surface-electrode ion traps with $^{88}$Sr$^+$ ions using laser ablation, which is compatible with the cryogenic environment. Using Doppler cooling we observed small ion crystals in which optically resolved ions have a trapped lifetime over 2500 minutes.

Chiaverini et al. [Quant. Inf. Comput. 5, 419 (2005)] recently suggested a linear Paul trap geometry for ion trap quantum computation that places all of the electrodes in a plane. Such planar ion traps are compatible with modern semiconductor fabrication techniques and can be scaled to make compact, many zone traps. In this paper we present an experimental realization of planar ion traps using electrodes on a printed circuit board to trap linear chains of tens of 0.44 micron diameter charged particles in a vacuum of 15 Pa (0.1 torr). With these traps we address concerns about the low trap depth of planar ion traps and develop control electrode layouts for moving ions between trap zones without facing some of the technical difficulties involved in an atomic ion trap experiment. Specifically, we use a trap with 36 zones (77 electrodes) arranged in a cross to demonstrate loading from a traditional four rod linear Paul trap, linear ion movement, splitting and joining of ion chains, and movement of ions through intersections. We further propose an additional DC biased electrode above the trap which increases the trap depth dramatically, and a novel planar ion trap geometry that generates a two dimensional lattice of point Paul traps.