S. Seidelin

We report on the design, fabrication, and preliminary testing of a 150 zone array built in a `surface-electrode' geometry microfabricated on a single substrate. We demonstrate transport of atomic ions between legs of a `Y'-type junction and measure the in-situ heating rates for the ions. The trap design demonstrates use of a basic component design library that can be quickly assembled to form structures optimized for a particular experiment.

We have measured motional heating rates of trapped atomic ions, a factor that can influence multi-ion quantum logic gate fidelities. Two simplified techniques were developed for this purpose: one relies on Raman sideband detection implemented with a single laser source, while the second is even simpler and is based on time-resolved fluorescence detection during Doppler recooling. We applied these methods to determine heating rates in a microfrabricated surface-electrode trap made of gold on fused quartz, which traps ions 40 microns above its surface. Heating rates obtained from the two techniques were found to be in reasonable agreement. In addition, the trap gives rise to a heating rate of 300 plus or minus 30 per second for a motional frequency of 5.25 MHz, substantially below the trend observed in other traps.

We investigate the temporal dynamics of Doppler cooling of an initially hot single trapped atom in the weak binding regime using a semiclassical approach. We develop an analytical model for the simplest case of a single vibrational mode for a harmonic trap, and show how this model allows us to estimate the initial energy of the trapped particle by observing the fluorescence rate during the cooling process. The experimental implementation of this temperature measurement provides a way to measure atom heating rates by observing the temperature rise in the absence of cooling. This method is technically relatively simple compared to conventional sideband detection methods, and the two methods are in reasonable agreement. We also discuss the effects of RF micromotion, relevant for a trapped atomic ion, and the effect of coupling between the vibrational modes on the cooling dynamics.

A key requirement for scalable quantum computing is that elementary quantum gates can be implemented with sufficiently low error. One method for determining the error behavior of a gate implementation is to perform process tomography. However, standard process tomography is limited by errors in state preparation, measurement and one-qubit gates. It suffers from inefficient scaling with number of qubits and does not detect adverse error-compounding when gates are composed in long sequences. An additional problem is due to the fact that desirable error probabilities for scalable quantum computing are of the order of 0.0001 or lower. Experimentally proving such low errors is challenging. We describe a randomized benchmarking method that yields estimates of the computationally relevant errors without relying on accurate state preparation and measurement. Since it involves long sequences of randomly chosen gates, it also verifies that error behavior is stable when used in long computations. We implemented randomized benchmarking on trapped atomic ion qubits, establishing a one-qubit error probability per randomized pi/2 pulse of 0.00482(17) in a particular experiment. We expect this error probability to be readily improved with straightforward technical modifications.

We analyze the error in trapped-ion, hyperfine qubit, quantum gates due to spontaneous scattering of photons from the gate laser beams. We investigate single-qubit rotations that are based on stimulated Raman transitions and two-qubit entangling phase-gates that are based on spin-dependent optical dipole forces. This error is compared between different ion species currently being investigated as possible quantum information carriers. For both gate types we show that with realistic laser powers the scattering error can be reduced to below current estimates of the fault-tolerance error threshold.

It was recently proposed to use small groups of trapped ions as qubit carriers in miniaturized electrode arrays that comprise a large number of individual trapping zones, between which ions could be moved. This approach might be scalable for quantum information processing with a large numbers of qubits. Processing of quantum information is achieved by transporting ions to and from separate memory and qubit manipulation zones in between quantum logic operations. The transport of ion groups in this scheme plays a major role and requires precise experimental control and fast transport. In this paper we introduce a theoretical framework to study ion transport in external potentials that might be created by typical miniaturized Paul trap electrode arrays. In particular we discuss the relationship between classical and quantum descriptions of the transport and study the energy transfer to the oscillatory motion during near-adiabatic transport. Based on our findings we suggest a numerical method to find electrode potentials as a function of time to optimize the local potential an ion experiences during transport. We demonstrate this method for one specific electrode geometry that should closely represent the situation encountered in realistic trap arrays.

The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.

We demonstrate confinement of individual atomic ions in a radio-frequency Paul trap with a novel geometry where the electrodes are located in a single plane and the ions confined above this plane. This device is realized with a relatively simple fabrication procedure and has important implications for quantum state manipulation and quantum information processing using large numbers of ions. We confine laser-cooled Mg-24 ions approximately 40 micrometer above planar gold electrodes. We measure the ions' motional frequencies and compare them to simulations. From measurements of the escape time of ions from the trap, we also determine a heating rate of approximately five motional quanta per millisecond for a trap frequency of 5.3 MHz.

We briefly discuss recent experiments on quantum information processing using trapped ions at NIST. A central theme of this work has been to increase our capabilities in terms of quantum computing protocols, but we have also applied the same concepts to improved metrology, particularly in the area of frequency standards and atomic clocks. Such work may eventually shed light on more fundamental issues, such as the quantum measurement problem.

We discuss observations of the ion flux from a cloud of trapped metastable helium atoms. Both Bose-Einstein condensates and thermal clouds were investigated. The ion flux is compared to time-of-flight observations of the expanded cloud. We show data concerning BEC formation and decay, as well as measurements of two- and three-body ionization rate constants. We also discuss possible improvements and extensions of our results.